Method for manufacturing high-k metal-gate (HKMG) device

A technology of high dielectric layer and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problem of high difficulty in process realization, and achieve the effect of reducing uncontrollability and process difficulty
CN103779280AActive Publication Date: 2014-05-07SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2014-05-07

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Abstract

The invention discloses a method for manufacturing a high-k metal-gate (HKMG) device. Fluorine ion implantation is executed after pseudo-polycrystalline silicon and a dielectric layer are removed. First-time annealing is performed after liner oxide is formed. Second-time annealing is performed after a high dielectric layer is formed. Fluorine ions are diffused from a channel region of a substrate to the liner oxide and the high dielectric layer and are combined with unstable hydrogen bonds to form a silicofluoride group. Therefore, technology uncontrollability and technology difficulty are decreased in a process that the fluorine ions are diffused from the pseudo-polycrystalline silicon to the high dielectric layer.
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Description

technical field

[0001] The invention relates to the field of semiconductor device manufacturing, in particular to a method for manufacturing a high dielectric layer metal gate (HKMG) device. Background technique

[0002] With the development of semiconductor integrated circuits, existing semiconductor devices, such as polysilicon gates commonly used in complementary metal oxide semiconductor (CMOS) devices, have gradually revealed the following problems: the effective thickness of the gate insulating layer increases due to gate loss, The dopant easily penetrates into the substrate through the polysilicon gate to cause a change in the threshold voltage, and it is difficult to achieve a low resistance value on a small width. In order to solve the above problems, semiconductor technology has developed a semiconductor device that replaces the existing polysilicon gate with a metal gate, and uses a high dielectric constant (high k) material as a semiconductor device for the gate ...

Claims

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