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A test method for hot carrier injection effect of ldmos device

A technology of hot carrier and test method, applied in the field of test of hot carrier injection effect, can solve the problems of unfavorable process development cycle and market demand, high test cost, a large number of tests and time, etc., to achieve automatic grasping The effect of data and computing, labor cost reduction, time reduction

Active Publication Date: 2016-08-03
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

LDMOS usually works in a pulse mode, which requires HCI evaluation within a voltage range; if the entire range is determined through actual testing, it will take a lot of testing and time, which is not conducive to the process development cycle and market demand, and the test cost is high.

Method used

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  • A test method for hot carrier injection effect of ldmos device
  • A test method for hot carrier injection effect of ldmos device
  • A test method for hot carrier injection effect of ldmos device

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Embodiment Construction

[0038] The present invention is aimed at the existing LDMOS device products. When doing the SOA (SafeOperationArea, safe operating area) test of HCI (HotCarrierInject, hot carrier injection effect), only one voltage point can be taken as the stress condition, and all operating voltages cannot be involved. This problem proposes a simple test method that can cover all voltage points in the working range. Next, the technical solution of the present invention will be introduced in detail.

[0039] See figure 1 , figure 1 It is a flow chart of the testing method of the hot carrier injection effect of the LDMOS device of the present invention. As shown, the test method includes steps:

[0040] S1: Provide an LDMOS device for testing HCI. Before testing, the gate operating voltage (Vgop) and drain breakdown voltage (Vsnapback) of the LDMOS device need to be known, and the LDMOS device should be prepared for testing, that is, the drain, source, gate and The substrates are respect...

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Abstract

The present invention provides a method for testing a hot carrier effect of an LDMOS component. In the testing method, by using the life of a component obtained under a stress condition, a life model is used to reversely deduce the working life of an LDMOS component under each working condition, and an SOA that comprises HCI in the entire working range can be obtained. In the present invention, because it is unnecessary to test the lives of all working voltages, time of the entire testing process is greatly shortened. Moreover, by using an Excel macro program written by VB, automatic data grabbing and calculation can be implemented, thereby greatly reducing the human cost of the operation.

Description

technical field [0001] The invention relates to the field of MOS device reliability research, in particular to a testing method for the hot carrier injection effect of LDMOS. Background technique [0002] In display drive and power management products, we need high-voltage devices that can withstand high voltage and pass high current; LDMOS (Laterally Diffused Metal Oxide Semiconductor Device) is widely used because it is easier to be compatible with CMOS technology; its gate electrode The working voltage of the battery is very low, generally only 5V, and the drain terminal voltage is as high as 60V. Parameters affecting LDMOS active drain breakdown voltage (BVDS), on-resistance (Rds ON ), etc.; if these parameters degrade quickly under continuous working conditions, it may cause the impact of chip temperature rise; therefore, the degradation of these parameters during use has attracted more attention. [0003] The safe working area of ​​MOS refers to that in order to ensu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2642G01R31/2621
Inventor 杨涛王少荣
Owner CSMC TECH FAB2 CO LTD