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Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device

A technology of semiconductors and devices, applied in the field of manufacturing such semiconductor devices, can solve problems such as not suitable for mass production of wafers

Active Publication Date: 2014-06-18
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Requires primitive techniques such as laser machining, lapping, grinding, or sandblasting to produce the desired shape of the edge termination zone, which are generally not suitable for wafer mass production

Method used

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  • Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device
  • Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device
  • Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device

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Embodiment Construction

[0019] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terms, such as "top", "bottom", "front", "rear", "leading", "trailing", etc., are referred to with reference to an orientation in one or more of the figures being described. use. Since components of an embodiment may be positioned in a number of different orientations, directional terms are used for purposes of illustration and in no way of limitation. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description is not to be taken in a limiting sense, and the scope of the invention is defined by the appended claims. Specific language has been used in the described embodiment...

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Abstract

A semiconductor body has a first side, second side, lateral edge, active area, edge termination between the active area and the lateral edge, and drift region of a first conductivity type. The edge termination includes a step formed in the semiconductor body between the first side and the lateral edge. The step includes a lateral surface extending up to the first side and a bottom surface extending up to the lateral edge. A first doping zone of a second conductivity type is formed in the semiconductor body along the lateral surface of the step and forms a pn-junction with the drift region. A second doping zone of the first conductivity type is formed in the semiconductor body at least along a part of the bottom surface of the step and extends up to the lateral edge, wherein the second doping zone is in contact with the drift region.

Description

technical field [0001] Embodiments described herein relate to semiconductor devices having edge terminations with trench stops at the bottom of trenches, and methods for fabricating such semiconductor devices. Background technique [0002] High voltage devices require reliable edge termination at the edge of the die to ensure that the device can reliably block high voltages. The edge termination will relieve the electric field strength between the active area and the notch or saw edge and will prevent any excessive field increase at the saw edge. Typically, the edge termination is adapted to shape the electric field such that the potential lines are turned towards the device surface without any strong bending or crowding of the potential lines in order to prevent avalanche generation in the semiconductor substrate or dielectric shock in the passivation layer. Put on. The key topological regions in edge-terminated structures are the steps and edges that can generate peak fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/36H01L21/04
CPCH01L29/0649H01L29/0611H01L29/7395H01L29/7802H01L29/0661H01L29/861H01L21/26586H01L29/2003H01L29/66712H01L29/402H01L29/66136H01L29/66325H01L29/7393H01L29/78H01L29/8613H01L29/0638H01L29/41766H01L29/7811H01L29/0615H01L29/0653H01L21/266H01L21/765H01L29/66681
Inventor G.施密特
Owner INFINEON TECH AG
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