Chemical mechanical polishing pad with broad-spectrum endpoint detection window and method of polishing using same

Abstract

A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ≦̸40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Description

technical field

[0001] The present invention generally relates to the field of chemical mechanical polishing. In particular, the present invention relates to a chemical mechanical polishing pad having a broad spectrum endpoint detection window block; wherein the broad spectrum endpoint detection window block has <40% spectral loss. The present invention also relates to a method of chemical mechanical polishing of a substrate using a chemical mechanical polishing pad having a broad spectrum endpoint detection window block; wherein the broad spectrum endpoint detection window block has a spectral loss of <40%. Background technique

[0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials are deposited on or removed from the surface of a semiconductor wafer. Thin layers of conductive, semiconducting, and dielectric materials can be deposited using a number of deposition techniques. Dep...

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