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Chemical mechanical polishing pad with broad-spectrum endpoint detection window and method of polishing using same

A chemical-mechanical, end-point detection technology, used in grinding machine tools, grinding tools, manufacturing tools, etc., can solve problems such as pressure increase

Active Publication Date: 2017-05-24
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, to facilitate thinner material layers and smaller device sizes in semiconductor polishing applications, there is increasing pressure to use shorter wavelength light for endpoint detection purposes

Method used

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  • Chemical mechanical polishing pad with broad-spectrum endpoint detection window and method of polishing using same
  • Chemical mechanical polishing pad with broad-spectrum endpoint detection window and method of polishing using same
  • Chemical mechanical polishing pad with broad-spectrum endpoint detection window and method of polishing using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment WB1

[0083] Example WB1: Preparation of endpoint detection window block

[0084] Made of 20 mil thick polydicyclopentadiene cyclic olefin polymer sheet (in 1420R (available from Zeon Corporation) to cut out a circular test window with a diameter of 10.795 cm.

Embodiment WB2

[0085] Embodiment WB2: the preparation of endpoint detection window block

[0086] From a 20 mil thick sheet of cyclic olefin copolymer prepared from norbornene and ethylene using a metallocene catalyst (in 6013 purchased from Topas Advanced Polymers, Inc.) A circular test window with a diameter of 10.795 cm was cut out.

Embodiment T1

[0087] Embodiment T1: window block spectral loss analysis

[0088] Prepare the window block material according to the method of Comparative Example WBC and Example Examples WB1-WB2, and then use the following instruments to test the above-mentioned material according to ASTM D1044-08: Equipped with Verity FL2004 flashlight and Spectraview1 software (version is VI4.40) Verity SD1024D spectrograph, and Taber 5150 Abraser type grinding tool equipped with Type H22 grinding wheel (500 gram weight, 60 rpm and 10 cycles). The measured transmittance losses of the window bulk materials at various wavelengths are shown in Table 1. The spectral loss of each window bulk material is also shown in Table 1.

[0089] Table 1

[0090]

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PUM

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Abstract

A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ≦̸40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Description

technical field [0001] The present invention generally relates to the field of chemical mechanical polishing. In particular, the present invention relates to a chemical mechanical polishing pad having a broad spectrum endpoint detection window block; wherein the broad spectrum endpoint detection window block has <40% spectral loss. The present invention also relates to a method of chemical mechanical polishing of a substrate using a chemical mechanical polishing pad having a broad spectrum endpoint detection window block; wherein the broad spectrum endpoint detection window block has a spectral loss of <40%. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials are deposited on or removed from the surface of a semiconductor wafer. Thin layers of conductive, semiconducting, and dielectric materials can be deposited using a number of deposition techniques. Dep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/24
CPCB24B37/013B24B37/24B24B37/042B24B37/205
Inventor A·雷珀D·B·詹姆士M·A·洛伊格斯
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC