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FinFET with bottom SiGe layer in source/drain

A source and drain technology used in FinFETs. field

Active Publication Date: 2014-09-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] In some FinFET devices, weak drive current and short channel effects are challenging issues as the device size decreases

Method used

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  • FinFET with bottom SiGe layer in source/drain
  • FinFET with bottom SiGe layer in source/drain
  • FinFET with bottom SiGe layer in source/drain

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Embodiment Construction

[0031] Details of the manufacture and use of various embodiments are discussed below. It should be appreciated that the present invention provides many applicable innovative concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the disclosure.

[0032] Additionally, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for brevity and clarity and does not in itself dictate a relationship between the various embodiments and / or structures described. Moreover, the structure, connection, and / or coupling of one component to another component in the present disclosure may include embodiments in which the connected components are directly formed, or embodiments in which additional components are inserted between the components, so that the two components It cannot be connected d...

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Abstract

The invention relates to a FinFET with a bottom SiGe layer in a source / drain. The FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a drain in the fin structure, a channel in the fin structure between the source and the drain, a gate dielectric layer over the channel, and a gate over the gate dielectric layer. At least one of the source and the drain includes a bottom SiGe layer.

Description

technical field [0001] The present invention relates generally to semiconductor devices, and more particularly to a FinFET. Background technique [0002] In some FinFET devices, weak drive current and short channel effects are challenging issues as the device size decreases. FinFETs with improved drive current and reduced short channel effects are desired. Contents of the invention [0003] In order to solve the above problems, the present invention provides a FinFET, comprising: a substrate; a fin structure located on the substrate; a source located in the fin structure; a drain located in the fin structure; a channel , located between the source and the drain in the fin structure; a gate dielectric layer located above the channel; and a gate located above the gate dielectric layer, wherein the At least one of the source and the drain includes a bottom SiGe layer. [0004] The FinFET further includes a sidewall SiGe layer in at least one of the source and the drain. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/08
CPCH01L29/7833H01L29/66795H01L29/6659H01L29/7848H01L29/785H01L29/0657
Inventor 游明华郑培仁李资良
Owner TAIWAN SEMICON MFG CO LTD
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