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Wide-temperature-range green laser device

A laser and green light technology, applied in the field of lasers, can solve problems such as system mismatch, inability to realize laser output, and inability to realize applications in a wide temperature range, achieving the effect of good stability and compact structure

Active Publication Date: 2014-09-17
青岛镭视光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the phase matching angle of frequency doubling crystals such as KTP and LBO is greatly affected by temperature, the system is severely mismatched when the temperature changes (for example, from room temperature to low temperature 0°C), and laser output cannot be realized, and applications in a wide temperature range cannot be realized.

Method used

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  • Wide-temperature-range green laser device

Examples

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Effect test

Embodiment 1

[0034] Example 1: A green laser includes a semiconductor laser 1, a focusing lens 2, a self-frequency doubling laser crystal 3 and a frequency doubling crystal 4 arranged in sequence along an optical path.

[0035] structured as figure 1 As shown, the semiconductor laser 1 with an emission wavelength of 808nm is placed on the focal length of the focusing lens 2 (front) [the focal length is the length, not the specific position, I always feel that the meaning of "placed on the focal length" is unclear, does it mean the focus? ], the focal length of the focusing lens 2 is 5 mm, and the self-frequency doubling laser crystal 3 is placed on the focal length of the focusing lens 2 (behind).

[0036] The self-frequency doubling laser crystal 3 is Nd:YCOB crystal, the Nd doping concentration is 8at%, the length of the light transmission direction is 5mm, and the cutting direction is the phase matching direction of the 530nm (or 545nm) laser generated by the self-frequency doubling....

Embodiment 2

[0040] Example 2: A green laser includes a semiconductor laser 1, a focusing lens 2, a self-frequency doubling laser crystal 3, and a frequency doubling crystal 4, which are arranged in sequence along an optical path.

[0041] structured as figure 1 As shown, a semiconductor laser 1 with an emission wavelength of 808nm is placed on the focal length in front of the focusing lens 2. The focal length of the focusing lens 2 is 5mm, and the self-frequency doubling laser crystal 3 is placed on the focal length behind the focusing lens 2.

[0042] The self-frequency doubling laser crystal 3 is Nd:GdCOB crystal, the Nd doping concentration is 8at%, the length of the light transmission direction is 5mm, the cutting direction is the phase matching direction of the 530nm (or 545nm) laser generated by the self-frequency doubling, and the self-frequency doubling laser crystal 3 The dielectric film on the front surface is a highly reflective dielectric film for 1060~1090nm, 530~545nm and...

Embodiment 3

[0046] Example 3: A green laser includes a semiconductor laser 1, a focusing lens 2, a self-frequency doubling laser crystal 3, and a frequency doubling crystal 4, which are arranged in sequence along an optical path.

[0047] structured as figure 1 As shown, the semiconductor laser emitting wavelength of 808nm is placed on the focal length in front of the focusing lens 2, the focal length of the focusing lens 2 is 5mm, and the self-frequency doubling laser crystal 3 is placed on the focal length behind the focusing lens 2.

[0048]The self-frequency doubling laser crystal 3 is Nd:YCOB crystal, the Nd doping concentration is 20at%, the length of the light-passing direction is 2mm, and the cutting direction is the phase matching direction of the 530nm (or 545nm) laser generated by the self-frequency doubling. The self-frequency doubling laser crystal 3 The dielectric film on the front surface is a highly reflective dielectric film for 1060~1090nm, 530~545nm and a high transm...

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Abstract

The invention discloses a green laser device which comprises a pumping source, a focusing lens, a self frequency multiplication laser crystal and a frequency multiplication crystal, wherein the pumping source, the focusing lens, the self frequency multiplication laser crystal and the frequency multiplication crystal are sequentially arranged. The laser transmitting faces of the self frequency multiplication laser crystal and the frequency multiplication crystal are plated with dielectric film. The contact faces of the self frequency multiplication laser crystal and the frequency multiplication crystal are fixed together. By means of the green laser device, the frequency multiplication crystal and the self frequency multiplication laser crystal are combined to jointly output green lasers. Under the low-temperature condition, the frequency multiplication crystal is mismatched, and the green lasers are output by the self frequency multiplication laser crystal; under the normal-temperature condition, the self frequency multiplication laser crystal serves as a laser crystal to generate fundamental frequency lasers, due to the fact that the frequency multiplication crystal has the larger nonlinear coefficient and the higher laser-laser conversion efficiency, frequency multiplication is carried out on the fundamental frequency lasers through the frequency multiplication crystal to generate the green lasers for outputting, and compared with a single self frequency multiplication crystal, the laser-laser conversion efficiency and the output power are greatly improved. The gluing technology is adopted for the self frequency multiplication laser crystal and the frequency multiplication crystal, the structure is compact, and the stability is good.

Description

[0001] technical field [0002] The invention belongs to the technical field of lasers, in particular to a laser device for generating wide-temperature green laser light. Background technique [0003] Semiconductor-pumped all-solid-state lasers (DPSSL for short) have developed rapidly in recent years. They have the advantages of high efficiency, long life, compact structure, and good beam quality. They are used in laser drilling, cutting, welding, marking, optical communications, and medical There are important applications in diagnosis, laser radar, laser spectrum analysis, high-power laser and other fields. [0004] Low and medium power all-solid-state green lasers are generally realized by semiconductors, laser crystals and frequency-doubling crystals. Because the phase matching angle of frequency-doubling crystals such as KTP and LBO is greatly affected by temperature, the system is seriously mismatched when the temperature changes (for example, from room temperature to...

Claims

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Application Information

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IPC IPC(8): H01S3/16H01S3/0941H01S3/109
Inventor 马长勤
Owner 青岛镭视光电科技有限公司
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