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Level conversion circuit, and logic circuit with level conversion function

A technology of logic circuit and conversion circuit, which is applied in the direction of logic circuit, logic circuit interface device, logic circuit coupling/interface using field effect transistor, etc., and can solve problems such as failure

Active Publication Date: 2017-11-07
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As for the FET whose source is grounded, in MESFET and JFET whose gate is a diode, if the gate voltage rises, a sudden current will flow through the FET, which may cause failure.

Method used

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  • Level conversion circuit, and logic circuit with level conversion function
  • Level conversion circuit, and logic circuit with level conversion function
  • Level conversion circuit, and logic circuit with level conversion function

Examples

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Embodiment Construction

[0060] A level shift circuit and a logic circuit with a level shift function according to the first embodiment of the present invention will be described with reference to the drawings. figure 1 It is a circuit diagram of a logic circuit 1 with a level conversion function according to the first embodiment.

[0061] The logic circuit 1 with a level conversion function is formed of a semiconductor substrate such as GaAs, and includes a level conversion circuit 10 and a logic circuit 100 .

[0062] The logic circuit 100 includes an EFET 101 , a DFET 102 , and a resistor 103 .

[0063] The EFET 101 is an enhancement type FET and corresponds to the "input FET" of the present invention. The source of EFET 101 is grounded. The gate of the EFET 101 becomes an input terminal of the logic circuit 100 . The EFET 101 is formed of MESFET and JFET whose gate is a diode.

[0064] The drain of the EFET 101 is connected to the output terminal (output voltage Vo) and also connected to one ...

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PUM

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Abstract

A level conversion circuit (10) includes an EFET (11), a diode (12) and resistors (13, 14). The drain of the EFET (11) is connected to an output terminal of the level conversion circuit (10). The drain and the gate of the EFET (11) are in conductive contact with each other. The source of the EFET (11) is grounded via the resistor (13). The drain of the EFET (11) is connected to one end of the resistor (14). The other end of the resistor (14) is connected to the cathode of the diode (12). The anode of the diode (12) is connected to a control voltage input terminal.

Description

technical field [0001] The invention relates to a level conversion circuit for converting voltage levels and a logic circuit with a level conversion function. Background technique [0002] When a logic circuit such as an inverter is formed using a semiconductor, generally, a source-grounded amplifier circuit such as DCFL (Direct Coupled FET Logic: Direct Coupled FET Logic) is used. As for the FET whose source is grounded, in MESFET and JFET whose gate is a diode, if the gate voltage rises, a sudden current will flow through the FET, which may cause failure. [0003] Therefore, conventionally, a technique has been conceived in which a level shift circuit is inserted in a preceding stage of a logic circuit without applying an excessive voltage to the FETs of the logic circuit, such as the level shift circuit of Patent Document 1. [0004] Figure 6 It is a circuit diagram of a logic circuit 1P with a level shifting function including the level shifting circuit disclosed in Pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0185
CPCH03K19/017509H03K19/018507
Inventor 德田胜利
Owner MURATA MFG CO LTD
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