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Semiconductor device with insulating layer of varying thickness

A technology of changing thickness and insulating layer, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., and can solve problems such as limited use range

Active Publication Date: 2017-10-24
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method is limited to forming flank angles greater than 10°
Furthermore, only thin oxide layers can be processed, thus limiting the scope of use of this method

Method used

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  • Semiconductor device with insulating layer of varying thickness
  • Semiconductor device with insulating layer of varying thickness
  • Semiconductor device with insulating layer of varying thickness

Examples

Experimental program
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Embodiment Construction

[0024] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and which show by way of illustration the manner in which specific embodiments of the invention may be practiced. In this regard, directional terms such as "top", "bottom", "front", "rear", "leading", "trailing", etc. are used with reference to the orientation of the depicted figure(s). Because components of an embodiment may be located in a number of different orientations, directional terms are used for purposes of illustration and not limitation. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description should not be taken in a limiting sense, and the scope of the invention is defined by the appended claims. The described embodiments use specific language that should not be construed as limiting the sc...

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PUM

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Abstract

A semiconductor device with an insulating layer having a varying thickness is disclosed. A layer having a laterally varying thickness, a substrate having a first surface, and an insulating layer formed on the first surface of the substrate are provided. At least one of a plurality of grooves and openings is formed in the insulating layer, wherein at least one of the plurality of grooves and openings are arranged at intervals. Each of at least one of the groove and the aperture has a transverse width, wherein at least one of the pitch and the transverse width varies in the transverse direction. At least one of the plurality of grooves and openings defines a given area in the insulating layer. The insulating layer having at least one of the plurality of grooves and openings is tempered at an elevated temperature such that the insulating layer at least partially melts to provide at least in the given area The insulating layer has a laterally varying thickness.

Description

technical field [0001] Embodiments described herein relate to semiconductor devices and methods for fabricating semiconductor devices. Background technique [0002] Semiconductor devices, such as power semiconductor devices, include edge termination structures for high voltage mitigation at the lateral periphery of the semiconductor device. Minimizing the space required for edge termination while maintaining the blocking capability of the device is an important consideration. In addition, the edge-termination structure should minimize the surface charge as well as the influence of external electric field. [0003] Commonly known edge termination structures employ different measures such as field rings, so-called laterally varying doping, trench structures and edge structures of wafers with positive or negative grinding angles. Measures that provide high roughness against surface charges and external electric fields employ so-called field plates, which can also be combined ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/28H01L29/78H01L29/40
CPCH01L21/2652H01L21/266H01L21/3085H01L21/3105H01L21/31111H01L21/31144H01L21/31155H01L29/42368H01L29/78H01L2924/0002H01L2924/00H01L29/404H01L29/7811H01L29/0615H01L29/0619H01L29/402H01L2924/00012H01L21/225H01L23/48
Inventor J.拉文H-J.舒尔策H.舒尔策
Owner INFINEON TECH AG