Photoelectric components

Abstract

The invention discloses an optoelectronic element, which includes a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a The first buffer layer is located between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of the first buffer layer on a side close to the second semiconductor layer is smaller than the second lattice constant.

Description

technical field [0001] The invention relates to a photoelectric element, in particular to a photoelectric element with a buffer layer of graded lattice constant. Background technique [0002] figure 1 It is a structural cross-sectional view of an existing photoelectric element 1, such as figure 1 As shown, the photoelectric element 1 includes a substrate 11 and a plurality of semiconductor layers 10, 12, 14, 16, 18 located on the substrate 11, wherein the plurality of semiconductor layers 10, 12, 14, 16, 18 are grown on the substrate 11 in sequence , and in a thickness direction from the semiconductor layer 10 to the semiconductor layer 18 , the lattice constants of the plurality of semiconductor layers 10 , 12 , 14 , 16 , 18 gradually become smaller. When a semiconductor layer with a smaller lattice constant, such as semiconductor layer 12, is grown on a semiconductor layer with a larger lattice constant, such as semiconductor layer 10, a tensile stress ( tensile strain)...

AI Technical Summary

Problems solved by technology

After the semiconductor layer 10 and the semiconductor layer 12 are connected, when the semiconductor layers 14, 16, 18 are grown on the semiconductor layer 12, the tensile stress will continue to accumulate in the photoelectric element 1, thus causing defects or misalignments

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