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A film thickness sensor

A film thickness sensor and film layer technology, applied in instruments, vacuum evaporation coating, coating and other directions, can solve the problems of slow speed, waste of Mg material, long time and so on

Active Publication Date: 2017-11-14
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual production, the inventors have found that Mg vapor is difficult to attach to the quartz film thickness sensor. It takes about 1 hour for the sensor to reach a stable evaporation rate. Not only is the time too long, but it will undoubtedly cause a large amount of waste of Mg materials.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] The embodiment of the present invention also provides a method for preparing a film thickness sensor as provided in the above embodiment, including:

[0029] Under high vacuum and oxygen-free conditions at a temperature of 600-700°C, vapor-deposit Mg material on the film thickness sensor to form a Mg film thickness sensor; or

[0030] Under high vacuum and oxygen-free conditions at a temperature of 600-700°C, vapor-deposit Mg material on the film thickness sensor to form a Mg film thickness sensor; continue to place the Mg film thickness sensor at a temperature of 30-45°C After 60-70 seconds in the oxygen-containing argon gas, the surface of the Mg film is partially oxidized to MgO, forming a Mg / MgO film thickness sensor.

[0031] In the process of preparing the Mg film thickness sensor, the Mg material needs to be vapor-deposited on the film thickness sensor under anaerobic conditions. High vacuum is 10 -7 Pa; and in the process of preparing the Mg / MgO film thickness...

Embodiment 1

[0036] Under high vacuum and oxygen-free conditions at a temperature of 600°C, Mg is evaporated on the film thickness sensor to form a Mg-film thickness sensor;

[0037] After the Mg-film thickness sensor is placed in argon containing 5% oxygen at a temperature of 30° C. for 60 seconds, the surface of the Mg film layer is partially oxidized to MgO, forming the Mg / MgO-film thickness sensor 1 .

Embodiment 2

[0039] Under high vacuum and oxygen-free conditions at a temperature of 650°C, Mg is evaporated on the film thickness sensor to form a Mg-film thickness sensor;

[0040] After placing the Mg-film thickness sensor in argon containing 5.5% oxygen at a temperature of 40° C. for 65 seconds, the surface of the Mg film layer is partially oxidized to MgO, forming the Mg / MgO-film thickness sensor 2 .

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Abstract

An embodiment of the present invention provides a film thickness sensor, which belongs to the field of vapor deposition, so that Mg material can be easily attached to the film thickness sensor, thereby avoiding waste of Mg material. The film thickness sensor is coated with a Mg or Mg / MgO film layer on the surface of the film thickness sensor. The invention can be used in the production of film thickness sensors.

Description

technical field [0001] The invention relates to the field of vapor deposition, in particular to a film thickness sensor for vapor deposition. Background technique [0002] In the existing OLED panel production, Mg / Ag alloy is usually selected as the cathode material, and the cathode material is evaporated onto the substrate glass by evaporation. In order to accurately monitor the film thickness of the cathode material evaporated onto the substrate, film thickness sensors are usually provided on the Mg and Ag evaporation sources. Generally, the selected film thickness sensors are quartz film thickness sensors. [0003] Generally speaking, in order to meet the needs of continuous production, two evaporation sources are usually designed in the same metal evaporation chamber, one is the main Mg evaporation source, and the other is the backup Mg evaporation source (the two evaporation sources include two The corresponding film thickness sensor). However, in actual production, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C14/24C23C14/18
CPCC23C14/14C23C14/24C23C14/54C23C14/18G01B1/00C23C14/546C23C14/5853C23C14/06G01B21/08
Inventor 肖昂
Owner BOE TECH GRP CO LTD