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Ohmic Contact Test Method for Silicon Carbide Devices

A technology of ohmic contact and testing method, which is applied in the field of electronics, can solve the problems of complex ohmic contact method, high cost, and restrictions on large-scale application, and achieve the effect of convenient comparison test and high test accuracy

Active Publication Date: 2017-07-28
INESA ELECTRON
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] Although silicon carbide materials have very excellent properties, due to the inability to obtain high-quality ohmic contacts between metal electrodes and silicon carbide semiconductor materials under existing process conditions, its large-scale application is restricted. The test also has the defects of complicated method and high cost

Method used

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  • Ohmic Contact Test Method for Silicon Carbide Devices
  • Ohmic Contact Test Method for Silicon Carbide Devices
  • Ohmic Contact Test Method for Silicon Carbide Devices

Examples

Experimental program
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specific Embodiment

[0049] A specific embodiment, the first predetermined structure sample or the second predetermined structure sample can use the ohmic contact electrode of the Au / Si / Ti / SiC system, and the ohmic contact electrode of the Au / Si / Ti / SiC system without heat treatment The sample is used as a reference sample. After heat treatment of the reference sample at 300°C, 400°C, 500°C, 600°C, and 700°C, the test data is obtained to draw the I-V electrical performance diagram. figure 2 I-V electrical performance plots for reference samples and test data after different heat treatments. The invention is convenient for carrying out comparative tests.

[0050] The ohmic contact testing method of the silicon carbide device of the present invention also includes the following steps:

[0051] Also includes the following steps:

[0052] Step 25, calculate the total resistance R between adjacent ohmic contact electrodes according to the test data t ;

[0053] Step 26, taking the total resistance ...

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Abstract

The invention relates to the field of electronic technology, in particular to an ohmic contact testing method for a silicon carbide device. Step 1, prepare a first predetermined structure sample and a second predetermined structure sample, a plurality of ohmic contact electrode groups are respectively formed on the first predetermined structure sample and the second predetermined structure sample, and each group of the ohmic contact electrode groups Including four ohmic contact electrodes arranged at set intervals, using the first predetermined structural sample as a reference test sample; step 2, testing and obtaining the electrical properties of each group of ohmic contact electrode groups; step 3, testing the The electrical properties of the first predetermined structure sample are compared with the electrical properties of the second predetermined structure sample. The invention is used for testing the ohmic contact of the silicon carbide device, has high testing accuracy and is convenient for comparative testing.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to an ohmic contact testing method for a silicon carbide device. Background technique [0002] With the rapid development of semiconductor material preparation and device manufacturing industry, research on wide bandgap semiconductor materials and devices such as silicon carbide and gallium nitride has received great attention. Silicon carbide has a large band gap, high saturation electron drift velocity, high impact Excellent physical and chemical properties and electrical properties such as electric field strength, high thermal conductivity, and strong radiation resistance are ideal for applications such as high temperature, high frequency, high power, radiation resistance, non-volatile storage devices, short-wavelength optoelectronic devices, and optoelectronic integration. One of the ideal semiconductor materials, especially suitable for applications in extreme conditions an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R27/14
Inventor 张永平辛帅王浩王硕
Owner INESA ELECTRON
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