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Semiconductor devices including control circuits

A technology for controlling circuits and semiconductors, which is applied in the manufacture of semiconductor devices, electrical solid state devices, semiconductor/solid state devices, etc., and can solve problems such as leakage and device temperature increase

Active Publication Date: 2018-04-10
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This dissipated energy results in a strong increase in device temperature since it may only leak to the heat sink in small

Method used

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  • Semiconductor devices including control circuits
  • Semiconductor devices including control circuits
  • Semiconductor devices including control circuits

Examples

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Embodiment Construction

[0016] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the disclosure may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features described or illustrated with respect to one embodiment can be used on or in conjunction with other embodiments to yield a still further embodiment. It is intended that such modifications and variations are covered by this disclosure. The examples are described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not to scale and are for illustrative purposes only. For the sake of clarity, corresponding reference numerals have been used in the different drawings to refer to the same elements if not s...

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Abstract

A semiconductor device including a control circuit is disclosed. The semiconductor device includes a semiconductor portion having a main FET and a control circuit. The main FET includes a gate electrode to control current flow through the body region between the source region and the drift region. The control circuit receives the local drift region potential of the main FET unit and outputs an output signal indicating when the local drift region potential exceeds a preset threshold. When the local drift region potential exceeds a preset threshold, the control circuit can turn down or turn off the main FET, and / or can output an overcurrent indication signal.

Description

Background technique [0001] Semiconductor devices, such as IGBTs (Insulated Gate Bipolar Transistors), are typically based on field effect transistor cells that provide a large channel width to maintain the voltage drop across the channel for ensuring that in the conducting state low loss. On the other hand, a large total channel width increases short-circuit current and adversely affects the short-circuit withstand capability of semiconductor devices. In some applications (eg control of the speed of electric motors with IGBT equipped inverters) a high short circuit withstand is required. During a short circuit, the IGBT actively limits the current flowing through the IGBT, so almost the entire supply voltage drops across the load terminals of the IGBT. During short-circuit operation, the power dissipated in the IGBT is extremely high due to simultaneous high voltage and high current at the load terminals. This dissipated energy leads to a strong increase in the temperature...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L29/739H01L29/06H01L29/78
CPCH01L21/823481H01L27/088H01L29/0649H01L29/407H01L29/7397H01L2924/0002H01L2924/00H02H7/00
Inventor A.毛德W.肖尔茨
Owner INFINEON TECH AUSTRIA AG