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Method for Optical Measurement of Pyramids on Textured Monocrystalline Silicon Wafers

A technology of optical measurement and single crystal silicon, which is applied in the direction of optical device, measuring device, scattering characteristic measurement, etc., to achieve the effect of preventing geometric shading

Active Publication Date: 2019-07-30
欧德富有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, the disadvantage of this method is that the reflected signal is mainly caused by reflections at the pyramid surface

Method used

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  • Method for Optical Measurement of Pyramids on Textured Monocrystalline Silicon Wafers
  • Method for Optical Measurement of Pyramids on Textured Monocrystalline Silicon Wafers
  • Method for Optical Measurement of Pyramids on Textured Monocrystalline Silicon Wafers

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Embodiment Construction

[0031] exist figure 1 with figure 2A textured silicon wafer 1 is shown in , as viewed from above and in cross-section, respectively. For illustrative purposes, some of the pyramids 2 on the wafer 1 are drawn exaggeratedly. In common texturing processes for single crystal silicon wafers, the pyramidal orientation is given by the crystallographic axis of the individual crystals being pulled in the direction of the principal axis.

[0032] For the following description of the example based on square wafer 1, use figure 1 and figure 2 The following coordinate system illustrated in , namely:

[0033] a) Cartesian coordinate system: the outer edge of the wafer 1 points in the x and y directions. The upwardly directed surface normal of the wafer 1 points in the z direction.

[0034] b) Spherical coordinate system: The angle θ is a polar angle and extends from 0° to +90°. θ=0° applies to all vectors in the plane of the wafer (ie, the xy plane) or to vectors where z=0. θ=90° ...

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Abstract

The invention relates to a method for the optical measurement of a pyramid (2) on a surface-textured monocrystalline silicon wafer (1), wherein by using at least one light source (4) and at least one light receiver (5) , the light (7) bent on the pyramid is received for determining the geometry of the pyramid. Light scattered in the forward direction (9) is optionally measured by another light receiver (8) and determines the extent to which the surface of the silicon wafer is covered by the pyramid.

Description

technical field [0001] The invention relates to a method for optical measurement of pyramids on a textured monocrystalline silicon wafer using at least one light source and at least one light receiver. Background technique [0002] An optical measurement method for measuring the average pyramid size of pyramids on a textured surface is known, for example, from patent specification EP1692458 B1. However, this method has the disadvantage that only the average pyramid size can be determined. In addition, the invention relates to an indirect method in which the pyramid size is inferred from the intensity of the reflected beam. Furthermore, due to the occurrence of diffraction effects and shading effects produced by the pyramids, this method is non-linear and thus supplies information on relative fluctuations in average pyramid size rather than absolute quantities. Furthermore, this method has the disadvantage that the signal reflected back is mainly caused by reflections at th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/47G01B11/30
CPCG01B11/303G01N21/4788G01B11/02G01B2210/56
Inventor 如弟格·库比则克
Owner 欧德富有限公司