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Method for the optical survey of pyramids on textured monocrystalline silicon wafers

A technology for optical measurement and single crystal silicon, applied in the direction of optical device, measuring device, scattering characteristic measurement, etc.

Active Publication Date: 2015-03-04
欧德富有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, the disadvantage of this method is that the reflected signal is mainly caused by reflections at the pyramid surface

Method used

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  • Method for the optical survey of pyramids on textured monocrystalline silicon wafers
  • Method for the optical survey of pyramids on textured monocrystalline silicon wafers
  • Method for the optical survey of pyramids on textured monocrystalline silicon wafers

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Embodiment Construction

[0032] exist figure 1 and figure 2A textured silicon wafer 1 is shown as viewed from above and in cross section, respectively. Some pyramids 2 on wafer 1 are overdrawn for illustrative purposes. In a common texturing process for single crystal silicon wafers, the pyramidal orientation is given by the crystallographic axis of the single crystal pulled in the direction of the major axis.

[0033] For the following description of the example based on the square wafer 1, use figure 1 and figure 2 The following coordinate systems are illustrated in , namely:

[0034] a) Cartesian coordinate system: The outer edge of the wafer 1 points in the x and y directions. The upwardly directed surface normal of the wafer 1 points in the z direction.

[0035] b) Spherical coordinate system: the angle θ is polar and extends from 0° to +90°. θ=0° applies to all vectors in the plane of the wafer (ie, the xy plane) or to vectors where z=0. θ=90° applies to the surface normal of wafer 1, ...

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Abstract

The invention relates to a method for the optical survey of pyramids (2) on surface-textured monocrystalline silicon wafers (1) wherein by using at least one light source (4) and at least one light receiver (5) the light (7) bent on the pyramids is received for determining geometric characteristics of the pyramids. Regardless from the latter or also in addition to the latter, light (9) that is scattered in a forward direction is optionally measured with a further light receiver (8) and the degree to which the surface of the silicon wafer is covered with pyramids is determined.

Description

technical field [0001] The present invention relates to a method for optically measuring pyramids on textured monocrystalline silicon wafers using at least one light source and at least one light receiver. Background technique [0002] An optical measurement method for measuring the average pyramid size of pyramids on textured surfaces is known, for example, from patent specification EP1692458 B1. However, this method has the disadvantage that only the average pyramid size can be determined. In addition, the present invention relates to an indirect method in which the cube size is deduced from the intensity of the reflected beam. Furthermore, due to the presence of diffraction effects and shading effects created by the pyramids, this method is non-linear and thus provides information on relative fluctuations in average pyramid size rather than absolute quantities. Furthermore, this method is disadvantageous in that the signal that is reflected back is mainly caused by refl...

Claims

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Application Information

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IPC IPC(8): G01N21/47G01B11/30
CPCG01B11/303G01B2210/56G01B11/02G01N21/4788
Inventor 如弟格·库比则克
Owner 欧德富有限公司