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Forming method of inverter and inverter

A technology of memory and fins, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of occupying substrate surface area, multi-substrate surface area, occupation, etc.

Active Publication Date: 2017-07-14
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, refer to Figure 4 , in the inverter formed by the prior art, since T 1 2 , causing the second fin 12 to occupy more substrate surface area than the first fin 11, so that the inverter will also occupy more substrate surface area

Method used

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  • Forming method of inverter and inverter
  • Forming method of inverter and inverter
  • Forming method of inverter and inverter

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0071] refer to Figure 5 , a substrate 100 is provided, and the substrate 100 includes a P-type active region I and an N-type active region II.

[0072] In a specific embodiment, the substrate 100 is a silicon substrate, a germanium substrate, or a silicon nitride substrate, etc.; or may also include other materials, such as III-V compounds such as gallium arsenide. Those skilled in the art can select the type of the substrate 100 according to the semiconductor devices formed on the substrate 100 , so the type of the semiconductor substrate should not limit the protection scope of the present invention.

[0073] refer to Image 6 , Figure 7 , Image 6 is a stereogram, Figure 7 is along Image 6 The schematic diagram of the cross-sectional structure of the AA direction of the substrate 100 is patterned to form a first fin 101 located in the P-type active region I and a second fin 102 located in the N-type active region II. The first fin The length direction of the port...

no. 2 example

[0097] The difference between the second embodiment and the first embodiment is that, in the second embodiment, the method for forming the first insulating layer includes:

[0098] refer to Figure 15 , deposit an insulating material layer 303 on the substrate 300, the insulating material layer 303 is higher than the first fin 301 and the second fin 302, that is, the upper surface of the insulating material layer 303 is higher than the first fin 301 and the second fin The upper surface of the fin 302 may also be substantially flat in other embodiments;

[0099] refer to Figure 16 , etch back the insulating material layer 303 to expose the first fin portion 301 and the second fin portion 302 of a partial height. Since the etch back is a simultaneous etching, the exposed first height H of the first fin portion 301 1 Equal to the second height H exposed by the second fin 301 2 , the upper surface of the remaining insulating material layer is parallel to the upper surface of t...

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Abstract

A method for forming an inverter and an inverter, wherein the method for forming an inverter includes: providing a substrate, the substrate including a P-type active region and an N-type active region; The first fin and the second fin located in the N-type active region, the first fin has a first width, the second fin has a second width, and the first width is equal to the second width; formed in the P-type active region The first insulating layer, the second insulating layer is formed in the N-type active region, the thickness of the second insulating layer is greater than or equal to 0 and less than the height of the second fin, the thickness of the first insulating layer is less than the height of the first fin and greater than The thickness of the second insulating layer. The first width of the first fin is equal to the second width of the second fin. In this way, the first fin and the second fin occupy the same surface area of ​​the substrate, and the inverter does not occupy more surface area.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming an inverter and the inverter. Background technique [0002] Static Random Access Memory (SRAM), as a member of memory, has a wide range of applications, and the SRAM storage unit is an important part of SRAM. [0003] The existing SRAM storage unit includes two cross-coupled inverters, the cross-coupling means that the input end of one inverter is electrically connected with the output end of the other inverter, and the two inverters are cross-coupled connected to form a latch circuit for storing data. Any one of the inverters includes a P-type transistor and an N-type transistor on the same substrate, and the P-type transistor and the N-type transistor are fin field effect transistors. [0004] In the prior art, the method for forming the inverter of the SRAM storage unit is: [0005] refer to figure 1 , providing a substrate 10, the substrate 10 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L27/092
CPCH01L21/8238H01L27/092H01L2229/00
Inventor 张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP