MgB2/BN/MgB2 Josephson junction and preparation method thereof
A vapor deposition method and manipulator technology, applied in the manufacture/processing of superconductor devices, devices containing a node of different materials, etc., to achieve excellent performance, improve compactness, and enhance the probability of heat dissipation
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2015-04-29
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Abstract
Description
technical field
[0001] The present invention relates to MgB 2 Application of thin film superconducting materials, specifically related to a kind of MgB 2 / BN / MgB 2 The invention relates to a preparation method of a Josephson junction, which belongs to the application field of weak electric superconductivity. Background technique
[0002] The mature Josephson tunnel junction technology is mainly based on niobium, but it must work at a liquid helium temperature of 4.2K. Other high-temperature superconducting materials have complex structures, and the theory and preparation methods are not perfect. MgB 2 It has the highest transition temperature among BCS superconductors, and its superconducting transition temperature is about 39K, which has broad application prospects in the field of weak electricity. But currently about making MgB 2 There are few research reports on superconducting Josephson junctions, and the process is not yet stable.
[0003] Preparation of MgB on c...
Examples
Embodiment Construction
[0020] Below in conjunction with the accompanying drawings, the present invention will be further described through the embodiments, but the embodiments are not intended to limit the present invention, and those skilled in the art can make various transformations and changes without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention is defined by the scope of claims.
[0021] The reaction chamber device used in the experiment is as follows: figure 1 As shown, the manipulators 1 and 2 are added to the existing HPCVD equipment, the magnesium block 3 is placed on the manipulators 1 and 2, and the heating wire 5 is arranged under the sample stage 6 to heat the sample stage 6 and the manipulator. The cooling water 4 is circulated to lower the temperature to prevent the reaction bulkhead from reacting with magnesium and boron atoms due to the hot wall effect, which will affect the formation of the required film. ...