Semiconductor device SEU probability numerical simulation method

Abstract

The invention relates to a semiconductor device SEU probability numerical simulation method. According to the method, by means of an SEU substitution model, the problems of high dimensionality and discretization of basic variables in an SEU problem are converted into one-dimensional continuous problems, and accordingly by means of an improved MCMC subset sampling method, small SEU probability is stimulated on the basis. Besides, an improved self-adaptability method is adopted on threshold selection of a middle invalidation event of the subset sampling method, so that condition probability calculation errors of the middle invalidation event are reduced, and SEU probability of a semiconductor device can be effectively obtained. The numerical simulation method is applicable to semiconductor device SEU numerical simulation and numerical simulation of semiconductor small probability events.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a method for simulating the single event effect of a semiconductor device, in particular to a method for numerically simulating the SEU flip probability of a semiconductor device. technical background [0002] Semiconductor devices are affected by radiation not only in space applications, but also in terrestrial applications such as medical, avionics, automotive, networking and infrastructure. Therefore, it is of great significance to accelerate the technological progress of modern semiconductor device manufacturing processes by studying the single event upset (SEU) probability of semiconductor devices to obtain the size of semiconductor devices affected by radiation. [0003] The existing well-known numerical simulation methods for the SEU flipping probability of semiconductor devices mainly include the Monte Carlo method. The known failure probability of a system...

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Problems solved by technology

[0039] The purpose of the present invention is to overcome the deficiencies in the prior art and provide a numerical simulation method for the SEU flip probability of a semiconductor device. The present invention converts the high-dimensional and discrete problems of the basic variables in the SEU problem into one-dimensional relatively continuous ones through the SEU substitution model. problem, and on t

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