Semiconductor devices and methods of manufacturing the same

Abstract

A semiconductor device includes a through electrode penetrating a substrate such that a first end portion of the through electrode protrudes from a first surface of the substrate, a passivation layer covering the first surface of the substrate and a sidewall of the first end portion of the through electrode, a bump having a lower portion penetrating the passivation layer and coupled to the first end portion of the through electrode, and a lower metal layer disposed between the bump and the first end portion of the through electrode. The lower metal layer extends onto a sidewall of the bump and has a concave shape.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0161190 filed with the Korean Intellectual Property Office on December 23, 2013, the entire contents of which are hereby incorporated by reference. technical field [0003] Embodiments of the present disclosure relate to semiconductor devices, and more particularly, to semiconductor devices having through electrodes and methods of manufacturing the same. Background technique [0004] A semiconductor device utilized in an electronic system may include various electronic circuit elements, and the electronic circuit elements may be integrated in and / or on a semiconductor substrate to constitute a semiconductor device (also referred to as a semiconductor chip or a semiconductor die). Memory semiconductor chips may be packaged and used in electronic systems. These semiconductor packages can be used in electronic systems such as computers, mobile sy...

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Problems solved by technology

Intermetallic compound material can be produced by chemical reaction between copper material and solder material of TSV to reduce the reliability of interconnect structure

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