A kind of preparation method of transition metal ion-doped semiconductor quantum dots with double light emission
A technology of transition metal ions and semiconductors, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of high toxicity of quantum dot materials, small Stokes shift, low fluorescence quantum yield, etc., and achieve simple preparation methods, The effect of large Stokes shift and high luminous efficiency
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[0025] The invention provides a method for preparing a semiconductor quantum dot doped with a double-light emitting transition metal ion, the method comprising:
[0026] Step 1: mixing acetate, sulfur powder and oil phase solvent to obtain a mixed solution;
[0027] Step 2: In an inert atmosphere, heat the mixed solution obtained in Step 1 to 200-260°C at a rate of 10-30°C / min, and maintain the temperature for 10-120min to form a mixed liquid crystal nucleus;
[0028] Step 3: Lower the reaction temperature to 100-150°C, then add the zinc precursor solution to the mixed liquid crystal nucleus obtained in step 2, and heat it to 220-280°C at a rate of 10-30°C / min, and maintain this temperature 10 to 120 minutes to form a zinc sulfide shell mixture;
[0029] Step 4: Lower the reaction temperature to 60-100° C., and then add a solvent to the zinc sulfide shell mixture obtained in Step 3 to obtain double-light-emitting transition metal ion-doped semiconductor quantum dots.
[0030...
Embodiment 1
[0036] Step 1: Add 0.02mmol of copper acetate, 0.008mmol of manganese acetate, 0.2mmol of zinc acetate, 0.2mmol of indium acetate, 0.8mmol of sulfur powder, 4.0ml of n-dodecanethiol and 6.0mL of oleylamine into 50mL of Tris In the neck bottle, the mixed solution is obtained;
[0037]Step 2: evacuate several times and introduce inert gas to remove gas. Under the protection of argon, heat the mixed solution obtained in step 1 to 220°C at a rate of 15°C / min, and maintain this temperature for 10min to form Copper, manganese doped zinc indium sulfur crystal nucleus;
[0038] Step 3: Lower the reaction temperature to 100°C, mix 0.4mmol zinc acetate in 0.1mL oleylamine and 0.9mL octadecene to form a zinc precursor solution, and then add the zinc precursor solution to the copper and manganese obtained in step 2 Doped with zinc indium sulfur crystal nuclei, and heated to 240°C at a rate of 15°C / min, and kept at this temperature for 20 minutes to form a zinc sulfide shell mixture;
[...
Embodiment 2
[0043] Step 1: Add 0.02mmol of copper acetate, 0.008mmol of manganese acetate, 0.2mmol of zinc acetate, 0.2mmol of indium acetate, 0.8mmol of sulfur powder, and 10mL of octadecylamine into a 50mL three-necked flask at room temperature to obtain a mixed solution ;
[0044] Step 2: evacuate several times and introduce inert gas to remove gas. Under the protection of argon, heat the mixed solution obtained in step 1 to 200°C at a rate of 10°C / min, and maintain this temperature for 20min to form Copper, manganese doped zinc indium sulfur crystal nucleus;
[0045] Step 3: Lower the reaction temperature to 120°C, prepare a zinc precursor solution with 0.4mmol zinc acetate in 0.1mL oleylamine and 0.9mL octadecene, and then add the zinc precursor solution to the copper and manganese obtained in step 2 Doped with zinc indium sulfur crystal nuclei, and heated to 220°C at a rate of 10°C / min, and kept at this temperature for 10 minutes to form a zinc sulfide shell mixture;
[0046] Step...
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