IGBT (insulated gate bipolar transistor) switch transient real-time simulation system based on macro-model

Abstract

The invention relates to an IGBT (insulated gate bipolar transistor) switch transient real-time simulation system based on a macro-model. The IGBT switch transient real-time simulation system comprises a device-level electromagnetic transient module, a component-level switch transient module and a thermal dynamic process module, wherein the device-level electromagnetic transient module is used for building a microsecond-level model for reflecting device-level electromagnetic transient, the component-level switch transient module is used for building a nanosecond-level model reflecting IGBT switch transient, the thermal dynamic process module is used for building a second-level model reflecting temperature dynamic, and the device-level electromagnetic transient module, the component-level switch transient module and the thermal dynamic process module sequentially exchange data through interfaces to realize joint simulation of the electromagnetic transient, the switch transient and the thermal dynamic process. According to the technical scheme, various control strategies are accurately verified, strategies such as over-voltage protection, over-current protection and overheating protection of a current converter can be accurately verified, simulation is more accurate, and verification is more comprehensive.

Description

Technical field: [0001] The invention relates to the technical field of power electronics modeling and simulation, and more particularly relates to a macromodel-based IGBT switch transient real-time simulation system. Background technique: [0002] At present, simulation technology has fully entered the era of real-time simulation. Real-time simulation has become the development direction of the simulation field because its simulation environment is closer to the actual system. The development of real-time simulation has made digital-physical hybrid simulation possible. , The development of new power electronic devices provides a more flexible and convenient means. The minimum simulation step size of the existing real-time simulation system can reach the microsecond level, and the simulation scale is based on a certain optimization algorithm. It has the real-time simulation capability of the MMC converter valve electromagnetic transient at a level of about 512, and can bette...

AI Technical Summary

Problems solved by technology

However, real-time simulation technology has no practical application in nanosecond-level switching transient simulation

For the field of power electronics, the device at the bottom is the device, and the transient process of the device must be coupled with the transient process of the device. incomplete

On the other hand, the failure of power electronic devices is often caused by device failure, and device failure also belongs to the category of device transient process. There is no technical means to study the failure mechanism of the device and the interaction with the device after failure.

In addition, there is a certain margin in the utilization of devices by existing equipment, so it is necessary to study the safety domain of device utilization

Images