Conductive via hole structure, array substrate and method for manufacturing display device
A manufacturing method and array substrate technology, which can be applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve the problems of high power consumption of displays
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Embodiment 1
[0070] This embodiment provides a method for manufacturing an array substrate. In the method, the non-metallic layer film on the first metal layer includes a first insulating layer film, and the non-metallic layer includes a first insulating layer and a second insulating layer. A first via hole in the insulating layer, the first via hole exposes the part of the surface of the first metal structure.
[0071] Such as Figures 4a to 4c As shown, the manufacturing method of the array substrate may include the following steps S11 to S14, and these steps will be described in detail below.
[0072] Step S11: if Figure 4a As shown, a first metal layer 01 is formed, and the first metal layer 01 includes a first metal structure 01a.
[0073] The first metal layer 01 can be formed in a common way in the field, which will not be repeated here.
[0074] Step S12: if Figure 4aAs shown, a first insulating layer film 71' is formed on the first metal layer 01, and the first insulating la...
Embodiment 2
[0104] In the method for fabricating the array substrate provided in this embodiment, the second metal layer including the second metal structure is formed before forming the non-metal layer film, and the second metal layer corresponding to the second metal structure is formed when the non-metal layer film is formed. Two parts, when the organic insulating layer is formed, a second organic insulating layer via hole corresponding to the second part of the non-metal layer film is also formed, and when the first part of the non-metal layer film is removed, the second part is also removed to expose the second metal Part of the surface of the structure can protect the multi-layer metal layer on the array substrate, so as to prevent the metal structure in the multi-layer metal layer from being severely oxidized after the organic insulating layer is formed, resulting in poor contact with other components.
[0105] Hereinafter, the non-metallic film includes the first insulating film an...
Embodiment 3
[0115] In the method for manufacturing an array substrate provided in this embodiment, the non-metallic layer film further includes an active layer pattern, and the material of the first part includes a material for forming the active layer pattern. In this embodiment, by protecting the first metal structure with the material that forms the active layer in the thin film transistor, the contact between the first metal structure and other components caused by the serious oxidation of the first metal structure after the formation of the organic insulating layer can be avoided Bad phenomenon.
[0116] The fabrication method of the array substrate provided by this embodiment will be described below in conjunction with the accompanying drawings, as shown in Figures 12a-12e As shown, the manufacturing method may include the following steps S41 to S44, and these steps will be described in detail below.
[0117] Step S41: forming a first metal layer 01, the first metal layer 01 inclu...
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Abstract
Description
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Application Information
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