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Composite contact plug structure and manufacturing method thereof

A technology of contact plug and double-layer structure, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., and can solve problems such as reducing contact plug resistance

Active Publication Date: 2019-04-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, reducing contact plug resistance while reducing contact hole size becomes an increasing challenge as the dimensions of integrated circuits continue to scale to smaller sub-micron dimensions in advanced node applications

Method used

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  • Composite contact plug structure and manufacturing method thereof
  • Composite contact plug structure and manufacturing method thereof
  • Composite contact plug structure and manufacturing method thereof

Examples

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Embodiment Construction

[0030] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component are formed in direct contact. An embodiment in which an additional component may be formed between such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does...

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Abstract

An embodiment contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the embodiment contact plug, the conductive liner comprises cobalt or ruthenium.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Application No. 61 / 986,740, entitled "Composite Plug with Low Resistance, Methods of Making Same, and Integrated Circuits Incorporating Same," filed April 30, 2014, the entire contents of which are incorporated herein as refer to. technical field [0003] The present invention relates to a composite contact plug structure and a manufacturing method thereof. Background technique [0004] Semiconductor devices are used in various electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment, as examples. In general, a typical semiconductor device includes a substrate with active devices such as transistors and capacitors. These active devices are initially isolated from each other, and interconnect structures are subsequently formed over the active devices to create functional circuitry. These interconnect structure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/768
CPCH01L21/28518H01L21/76846H01L21/76855H01L23/485H01L23/53252H01L23/53266H01L2924/0002H01L2924/00H01L21/28H01L21/3205H01L21/32051H01L21/76802H01L21/76828H01L21/76843H01L21/76847H01L23/481H01L23/5226H01L23/5384
Inventor 林瑀宏林圣轩张志维周友华许嘉麟
Owner TAIWAN SEMICON MFG CO LTD