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MIM capacitor structure and method of making the same

A technology of capacitor structure and manufacturing method, which is applied in the direction of circuits, electrical components, electric solid devices, etc., and can solve problems such as bumps affecting the etching effect

Active Publication Date: 2018-07-24
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of this application is to provide a MIM capacitor structure and its manufacturing method to solve the problem in the prior art that the bumps caused by the capacitor structure affect the etching effect

Method used

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  • MIM capacitor structure and method of making the same
  • MIM capacitor structure and method of making the same
  • MIM capacitor structure and method of making the same

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Embodiment Construction

[0037]It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0038] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.

[0039] For the convenience of description, spatially relative terms may be used here,...

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Abstract

The application provides a MIM capacitor structure and a manufacturing method thereof. The MIM capacitor structure includes: a first conductive layer; an insulating layer arranged on the first conductive layer; a second conductive layer arranged on the insulating layer, and the stacking direction of the first conductive layer, the insulating layer and the second conductive layer is In the longitudinal direction, the direction perpendicular to the longitudinal direction is the transverse direction. The second conductive layer includes one or a plurality of independent second dielectric material parts extending from the upper surface of the second conductive layer into the second conductive layer. Due to the existence of the second dielectric material portion, while the original large-area protrusions are dispersed into more small-area protrusions, the height of the small protrusions is also slightly different from that of the existing large-area protrusions. Therefore, the protrusion of the dielectric material above the capacitor structure becomes relatively flat, thereby effectively improving the accuracy of subsequent exposure and etching.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, relates to a MIM capacitor structure and a manufacturing method thereof. Background technique [0002] At present, capacitors in semiconductor devices can be roughly classified into polysilicon-insulator-polysilicon (PIP) capacitors and metal-insulator-metal (MIM) capacitors according to their structures. In practical applications, these capacitors can be selectively used according to the characteristics of semiconductor devices. For example, in high-frequency semiconductor devices, MIM capacitors can be used. [0003] With the improvement of the integration level of semiconductor devices, capacitors are required to have larger capacitance values ​​to ensure that the capacitors can work normally. However, for PIP capacitors, oxidation easily occurs at the interface between polysilicon as upper / lower electrode plates and an insulating layer as a c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/02
Inventor 张贺丰王晓东
Owner SEMICON MFG INT (SHANGHAI) CORP