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Method of forming mram device
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A device and magnetic tunnel junction technology, which is applied in the field of MRAM device formation, can solve the problems of etching not meeting design requirements, large area, loading effect, etc., to avoid etching loading effect, increase mask strength, and improve MTJ The effect of topography
Active Publication Date: 2018-01-09
SEMICON MFG INT (SHANGHAI) CORP
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For circular or elliptical MTJ structures, because the size of the inner ring is often small and the area outside the ring is large, the etching load effect is caused, so that the etching in the ring cannot meet the design requirements and short circuits and other problems occur.
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no. 1 example
[0049] refer to Figure 7 , the MRAM device forming method of the first embodiment includes the following steps:
[0050] Step S11, providing a semiconductor substrate on which a magnetic tunnel junction layer is formed;
[0051] Step S12, forming a sacrificial layer on the magnetic tunnel junction layer;
[0052] Step S13, etching the sacrificial layer to form via holes therein;
[0053] Step S14, forming a side wall on the inner side wall of the through hole;
[0054] Step S15, performing the first step of etching the magnetic tunnel junction layer at the bottom of the through hole, so as to remove part of the magnetic tunnel junction layer at the bottom of the through hole in advance;
[0055] Step S16, removing the sacrificial layer, performing a second etching step on the magnetic tunnel junction layer using the sidewall as a mask, removing the magnetic tunnel junction layer except under the sidewall, and the underside of the sidewall The magnetic tunnel junction laye...
no. 2 example
[0074] refer to Figure 15 , the forming method of the MRAM device of the second embodiment includes the following steps:
[0075] Step S21, providing a semiconductor substrate on which a magnetic tunnel junction layer is formed;
[0076] Step S22, sequentially forming a barrier layer and a sacrificial layer on the magnetic tunnel junction layer, the materials of the barrier layer and the sacrificial layer are low-k materials and the two are different from each other;
[0077] Step S23, etching the sacrificial layer to form a through hole therein, and the etching stops at the barrier layer;
[0078] Step S24, forming a side wall on the inner side wall of the through hole;
[0079] Step S25, etching and removing the barrier layer at the bottom of the through hole, performing a first step of etching the magnetic tunnel junction layer at the bottom of the through hole, so as to remove part of the magnetic tunnel junction layer at the bottom of the through hole in advance;
[0...
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Abstract
The invention provides a method for forming an MRAM device, comprising: providing a semiconductor substrate on which a magnetic tunnel junction layer is formed; forming a sacrificial layer on the magnetic tunnel junction layer; etching the sacrificial layer to forming a through hole therein; forming a side wall on the inner sidewall of the through hole; performing a first step of etching the magnetic tunnel junction layer at the bottom of the through hole to remove part of the magnetic tunnel junction at the bottom of the through hole in advance layer; remove the sacrificial layer, use the sidewall as a mask to perform a second etching step on the magnetic tunnel junction layer, remove the magnetic tunnel junction layer except under the sidewall, and the magnetic tunnel junction layer under the sidewall The tunnel junction layer forms a ring-shaped magnetic tunnel junction. The invention can avoid problems such as short circuit caused by etching load effect, and also has the advantage of simple process flow.
Description
technical field [0001] The invention relates to magnetic memory technology, in particular to a method for forming an MRAM device. Background technique [0002] Magnetic random access memory (MRAM) is one of the three most promising non-volatile memories at present, because it has the characteristics of high-speed reading and writing, low power consumption, radiation resistance and long data storage time, so it may replace SRAM and DRAM Waiting for the application on the mobile terminal. MRAM has an irreplaceable position for other fields that require high reliability, such as national defense and aerospace. [0003] The core structure in MRAM is the magnetic tunnel junction (MJT). The typical structure of the magnetic tunnel junction commonly used in the industry is a solidellipse. The characteristic of this structure is that it can be turned over stably when the cross section is regular. The current between the upper and lower electrodes cannot go straight up and down, b...
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