Pixel driving circuit and method, pixel structure, and display device

Abstract

The invention discloses a pixel driving circuit and method, a pixel structure, and a display device. The pixel driving circuit is used for driving an luminescent device in a pixel structure and comprises a driving transistor whose source is connected with the luminescent device; a capacitor structure whose first end is connected with the grid of the driving transistor; a first writing control unit used for writing threshold voltages of the driving transistor into the first end of the capacitor structure in a writing phase; a second writing control unit used for writing data signals into the second end of the capacitor structure in the writing phase; a power supply output control unit used for outputting power supply signals to the drain of the driving transistor in a luminescence phase; and a voltage following control unit used for controlling voltages of the grid of the driving transistor to change along with voltages of the source of the driving transistor through the capacitor structure. According to the invention, the influence exerted by the capacitance feature of the luminescent device itself on display is eliminated.

Description

technical field [0001] The invention relates to pixel driving technology, in particular to a pixel driving circuit, method, pixel structure and display device, which eliminates the influence of the capacitance characteristic of the light-emitting device itself on the display on the basis of threshold value compensation. Background technique [0002] in such as figure 1 In the traditional pixel structure of a light-emitting device driven by current or voltage, the data signal is input to the control terminal of the driving transistor to charge the capacitor, and then the electricity stored in the capacitor is used to control the conduction degree of the driving transistor to realize Control of the current of the light emitting device. [0003] Such as figure 1 In the pixel structure shown, the current I flowing through the light emitting device is: 0.5*μ n *C ox *W / L*(V data -V 工作 -V th ) 2 , where: μ n is the carrier mobility, C ox is the equivalent capacitance of ...

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Problems solved by technology

And as figure 2 The shown pixel structure with threshold voltage compensation does not have the ability to make the voltage of the N2 node follow the change of the voltage of the N4 node, which leads to the V of the driving transistor T5 gs will change during the light-emitting phase, and V gs The change of the light-emitting device will cause the current flowing through the light-emitting device to change, resulting in uneven brightness of the light-emitting device during the light-emitting stage.

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