Preparation method of nanometer sulfur dioxide based etching solution for circuit board

A technology of nano-sulfur dioxide and etching solution, applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve the problems of inconvenient metallographic sectioning process, short use time, irritating smell, etc. controllability, reduce surface tension, and increase etching speed

Inactive Publication Date: 2016-05-04
WUXI JIJIN ENVIRONMENTAL PROTECTION TECH CO LTD
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the ammonia water in the microetching solution is volatile and has a pungent smell, so it is not conducive to operation, and the use time after configuration is short, only about 0.5 hours, which brings inconvenience to the metallographic section process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] The preparation method of etching liquid for circuit board of the present invention comprises the following steps:

[0016] Step 1: Add the weakly acidic cation exchange resin to 2.5% organic hydrochloric acid by weight, stir and mix, the stirring speed is 50 rpm, the stirring time is 5 minutes, the stirring temperature is 10°C, and then filter out the weak acid Cation exchange resin, control or remove impurity ions in organic hydrochloric acid;

[0017] The second step: put 3.5% by weight of nano-sulfur dioxide and 1 / 3 of distilled water into the reactor, fully stir at normal temperature and pressure, the stirring time is 10 minutes, and the stirring speed is 60 rpm, stirring The temperature is 14°C;

[0018] The third step: then add triethanolamine that is 1.2% by weight, and stir for 6 minutes; add 0.5% iodic acid, and stir for 5 minutes; add one-third of distilled water, and stir for 4 minutes; add weight 2.5% organic hydrochloric acid, fully stirred for 5 minutes...

Embodiment 2

[0025] The preparation method of above-mentioned circuit board etchant, comprises the steps:

[0026] Step 1: Add the weakly acidic cation exchange resin to 2.8% organic hydrochloric acid by weight, stir and mix, the stirring speed is 55 rpm, the stirring time is 6 minutes, and the stirring temperature is 12°C, then filter out the weak acid Cation exchange resin, control or remove impurity ions in organic hydrochloric acid;

[0027] The second step: put 5% by weight of nano-sulfur dioxide and 1 / 3 of distilled water into the reactor, fully stir at normal temperature and pressure, the stirring time is 11 minutes, and the stirring speed is 65 rpm, stirring The temperature is 16°C;

[0028] The third step: then add 1.4% triethanolamine by weight and stir fully for 7 minutes; add 1.1% iodic acid and fully stir for 6 minutes; add 1 / 3 of distilled water and fully stir for 5 minutes; add weight 2.8% organic hydrochloric acid, fully stirred for 6 minutes; added 1.9% by weight of noni...

Embodiment 3

[0035] The preparation method of above-mentioned circuit board etchant, comprises the steps:

[0036] Step 1: Add the weakly acidic cation exchange resin to 2.8% organic hydrochloric acid by weight, stir and mix, the stirring speed is 60 rpm, the stirring time is 7 minutes, and the stirring temperature is 13°C, then filter out the weak acid Cation exchange resin, control or remove impurity ions in organic hydrochloric acid;

[0037] The second step: put 6.5% by weight of nano-sulfur dioxide and 1 / 3 of distilled water into the reactor, fully stir at normal temperature and pressure, the stirring time is 12 minutes, and the stirring speed is 70 rpm, stirring The temperature is 18°C;

[0038] The third step: then add the triethanolamine that is 1.6% by weight, and fully stir for 7 minutes; add 1.6% by weight of iodic acid, and fully stir for 7 minutes; add one-third of distilled water, and fully stir for 6 minutes; add weight 3.3% organic hydrochloric acid, fully stirred for 7 m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a nanometer sulfur dioxide based etching solution for a circuit board. The etching solution comprises following components by weight: 3.5%-6.5% of nano sulfur dioxide, 1.2%-1.6% of triethanolamine, 0.5%-1.6% of iodic acid, 3.3%-2.5% of organic hydrochloric acid, 1.5%-2.3% of a nonionic surface active agent, 0.5-1.5% of a stabilizer, 3.5%-5.6% of an antifoaming agent and the balance of distilled water. Based on the original process, nano sulfur dioxide is added in the etching solution, so as to conduct etching without anti-etching coating penetration and significantly increase the etching speed of the chromium metal film. The etching solution has controllable etching speed, and effectively suppresses of deterioration of an anti-corrosion protective layer, so as to obtain chromium metal film wiring with flat and smooth surface. The method has important application value.

Description

technical field [0001] The invention relates to a method for preparing an etching solution for circuit boards based on nanometer sulfur dioxide. Background technique [0002] At present, in the process of making circuit boards, the quality of circuit boards, the discovery and resolution of quality problems, and the evaluation of process improvement all need to be objectively inspected and judged by metallographic sections. The quality of the metallographic section directly affects the quality evaluation of the circuit board. The traditional metallographic slicing process includes sampling by milling; sealing the sample by resin mosaic method; grinding the sample; polishing the sample; microetching the sample. Wherein, the formula of the micro-etching liquid is 2-3 drops of hydrogen peroxide with a mass percentage of 50%, 8 ml of ammonia water with 25%-28%, and 8 ml of deionized water (DI water for short). Its disadvantage is that the ammonia water in the microetching solut...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): C09K13/06
CPCC09K13/06
Inventor刘进军
OwnerWUXI JIJIN ENVIRONMENTAL PROTECTION TECH CO LTD