A kind of etching solution for circuit board based on nano silicon dioxide

A technology of nano-silicon dioxide and etching solution, which is applied in the field of etching solution for circuit boards, can solve the problems of inconvenient metallographic slicing process, irritating smell, short use time, etc., and achieve controllable etching speed, reduce Effect of surface tension and deterioration suppression

Inactive Publication Date: 2017-12-08
深圳市新日东升电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the ammonia water in the microetching solution is volatile and has a pungent smell, so it is not conducive to operation, and the use time after configuration is short, only about 0.5 hours, which brings inconvenience to the metallographic section process

Method used

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  • A kind of etching solution for circuit board based on nano silicon dioxide
  • A kind of etching solution for circuit board based on nano silicon dioxide
  • A kind of etching solution for circuit board based on nano silicon dioxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The preparation method of above-mentioned circuit board etchant, comprises the steps:

[0019] The first step: add the weakly acidic cation exchange resin to 0.5% organic hydrochloric acid by weight, stir and mix, the stirring speed is 50 rpm, the stirring time is 5 minutes, the stirring temperature is 10°C, and then filter out the weak acid Cation exchange resin, control or remove impurity ions in organic hydrochloric acid;

[0020] The second step: put 1.5% by weight of nano-silica and one-third of distilled water into the reaction kettle, fully stir at normal temperature and pressure, the stirring time is 10 minutes, and the stirring speed is 60 rpm , the stirring temperature is 12°C;

[0021] Step 3: Then add 1.2% ammonium phosphate by weight and stir for 6 minutes; add 0.5% oxalic acid and stir for 5 minutes; add one-third of distilled water and stir for 4 minutes; add weight percent 0.5% organic hydrochloric acid, fully stirred for 5 minutes; added 0.3% by weigh...

Embodiment 2

[0028] The preparation method of above-mentioned circuit board etchant, comprises the steps:

[0029] Step 1: Add the weakly acidic cation exchange resin to 0.9% organic hydrochloric acid by weight, stir and mix, the stirring speed is 55 rpm, the stirring time is 6 minutes, and the stirring temperature is 12°C, then filter out the weak acid Cation exchange resin, control or remove impurity ions in organic hydrochloric acid;

[0030] The second step: put 1.8% by weight of nano silicon dioxide and 1 / 3 of distilled water into the reaction kettle, fully stir at normal temperature and pressure, the stirring time is 11 minutes, and the stirring speed is 65 rpm , the stirring temperature is 13°C;

[0031] Step 3: Then add 1.4% ammonium phosphate by weight and stir for 7 minutes; add 1.0% oxalic acid by weight and stir for 6 minutes; add one-third of distilled water and stir for 5 minutes; add weight percent 0.9% organic hydrochloric acid, fully stirred for 5 minutes; added 0.7% by ...

Embodiment 3

[0038] The preparation method of above-mentioned circuit board etchant, comprises the steps:

[0039] Step 1: Add the weakly acidic cation exchange resin to 1.2% organic hydrochloric acid by weight, stir and mix, the stirring speed is 60 rpm, the stirring time is 5 minutes, and the stirring temperature is 13°C, then filter out the weak acid Cation exchange resin, control or remove impurity ions in organic hydrochloric acid;

[0040] The second step: put 2.5% by weight of nano silicon dioxide and one-third of distilled water into the reaction kettle, fully stir at normal temperature and pressure, the stirring time is 12 minutes, and the stirring speed is 70 rpm , the stirring temperature is 14°C;

[0041] Step 3: Then add 1.6% ammonium phosphate by weight and stir for 7 minutes; add 1.6% oxalic acid and stir for 7 minutes; add 1 / 3 of distilled water and stir for 6 minutes; add weight percent 1.2% organic hydrochloric acid, fully stirred for 7 minutes; added 1.5% by weight non...

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Abstract

The invention discloses etching liquid for a circuit board based on nano-silicon dioxide. The etching liquid is prepared from, by weight, 1.5%-2.5% of nano-silicon dioxide, 1.2%-1.6% of triethanolamine, 0.5%-1.6% of iodic acid, 0.5%-1.2% of organic hydrochloric acid, 0.3%-1.5% of non-ionic surface active agent, 0.5%-1.2% of stabilizer, 0.5%-1.6% of defoaming agent and the balance distilled water. Nano-silicon dioxide is newly added based on an original process, etching can be conducted under the condition that etch-resistant coating penetration does not occur, the etching speed of a chromium metal film is remarkably increased, controllability of the etching speed is achieved, degradation of the anticorrosion protective layer is effectively restrained, a chromium metal film wire harness with the flat and smooth surface is obtained, and high application value is achieved.

Description

technical field [0001] The invention relates to an etchant for circuit boards based on nano silicon dioxide. Background technique [0002] At present, in the process of making circuit boards, the quality of circuit boards, the discovery and resolution of quality problems, and the evaluation of process improvement all need to be objectively inspected and judged by metallographic sections. The quality of the metallographic section directly affects the quality evaluation of the circuit board. The traditional metallographic slicing process includes sampling by milling; sealing the sample by resin mosaic method; grinding the sample; polishing the sample; microetching the sample. Wherein, the formula of the micro-etching solution is 2-3 drops of hydrogen peroxide with a mass percentage of 50%, 8 ml of ammonia water with 25%-28%, and 8 ml of deionized water (DI water for short). Its disadvantage is that the ammonia water in the microetching solution is volatile and has a pungent ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23F1/26
CPCC23F1/26
Inventor刘进军
Owner深圳市新日东升电子材料有限公司