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Systems and methods for using rf circuits on isolation materials

A technology with non-isolation and isolation characteristics, which is applied in the direction of circuits, electrical components, electric solid-state devices, etc., and can solve problems such as signal power loss and original RF signal degradation

Active Publication Date: 2019-05-10
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, this coupling can degrade the original RF signal
Also, some signal power is lost due to resistive losses

Method used

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  • Systems and methods for using rf circuits on isolation materials
  • Systems and methods for using rf circuits on isolation materials
  • Systems and methods for using rf circuits on isolation materials

Examples

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Embodiment Construction

[0041] The present invention will now be described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout, and wherein the illustrated structures and devices are not necessarily drawn to scale.

[0042] Sensor systems and methods are disclosed that use a mold or encapsulation material rather than silicon or other semiconductor material from a target area. This target area typically includes RF circuits, metal lines, high frequency components, etc. As a result, inductive coupling, capacitive coupling, nonlinear resistance, etc. are alleviated.

[0043] figure 1 is a diagram illustrating a system 100 for fabricating semiconductor devices with enhanced RF signal integrity. The system 100 identifies target areas and replaces the interfering material with mold or encapsulation material. The target area typically includes areas through which high power and / or high frequency signals have been generated.

[0044] System 100 is...

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PUM

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Abstract

Embodiments of the present disclosure relate to systems and methods for using RF circuits on isolation materials. A device is disclosed that includes a wafer / chip, a first layer, a first device, an isolation mold, and a second device. The first layer is formed over the chip and has non-isolation properties. The first device is formed over the first layer. In one example, it is formed only on this first layer. The isolation mold is formed on the chip. The isolation mold has isolation properties. The second device is formed substantially over the isolation mold.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular to a system and method for using RF circuits on isolation materials. Background technique [0002] Radio frequency (RF) circuits and metal lines are typically formed on bulk semiconductors. Consequently, inductive and capacitive coupling occurs between these components, circuits, and metal lines and the bulk semiconductor. [0003] Undesired coupling degrades the performance and operation of the components. For example, this coupling can degrade the original RF signal. Additionally, some signal power is lost due to resistive losses. Additionally, undesired signals such as harmonic frequencies may be generated. Furthermore, mutual modulation occurs when different signals interfere and crosstalk is generated. [0004] Mechanisms are needed to reduce undesired coupling and performance degradation. Contents of the invention [0005] According to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/16H01L21/67H01L21/98
CPCH01L21/6835H01L23/3121H01L23/5222H01L23/552H01L23/642H01L23/66H01L24/19H01L24/20H01L2221/68327H01L2221/6834H01L2221/68381H01L2224/04105H01L2224/12105H01L2224/24137H01L2924/1421H01L22/20
Inventor C·阿伦斯E·富尔古特A·米勒A·施特尔滕波尔
Owner INFINEON TECH AG