Side face pumping slab waveguide DPAL laser device

Abstract

A side face pumping slab waveguide DPAL laser device comprises an LD pumping module L, an LD pumping module R, a light guide pipe L, a light guide pipe R and a one-dimensional waveguide resonance cavity. The LD pumping module L and the LD pumping module R are symmetrically placed about the one-dimensional waveguide resonance cavity. The light guide pipe L and the light guide pipe R are symmetrically placed about the one-dimensional waveguide resonance cavity. All semiconductor laser devices of the LD pumping module L are placed on a spherical face in a stack array or linear array mode and point to a pumping window, wherein the pumping window, in the direction of the LD pumping module L, of the one-dimensional waveguide cavity serves as the center of the spherical face. All semiconductor laser devices of the LD pumping module R are placed on a spherical face in a stack array or linear array mode and point to a pumping window, wherein the pumping window, in the direction of the LD pumping module R, of the one-dimensional waveguide cavity serves as the center of the spherical face. the double-edge side face pumping mode is adopted for the laser device, and therefore the possibility that carbon-particle-polluted lasers generated after high-power-density pumping light and alkane type mixed gas react are output out of window pieces is greatly lowered; the light beam shaping process is simplified, and the problem that pumping light is not uniformly distributed is avoided; the modularized thought is adopted, and the laser device is suitable for various optical pump gas laser devices.

Description

technical field [0001] The present invention relates to gas laser technology, more specifically to a side-pumped slab waveguide DPAL (semiconductor pumped alkali metal vapor laser) laser. Background technique [0002] DPAL laser is a new type of optically pumped gas laser whose gain medium is alkali metal in vapor state, and the temperature of the gain medium is usually 100-200°C. The gain medium of DPAL is mainly potassium, rubidium or cesium in the vapor state, and its energy level structure is as follows: figure 1 shown. In the figure, n is the number of electron shells where the outermost electrons are located, and the n corresponding to K, Rb, and Cs are 4, 5, and 6, respectively. wxya 1 / 2 is the ground state energy level, nP 1 / 2 and nP 3 / 2 Excited state energy levels resulting from splitting for outermost electron spin-orbit interactions. The transitions from the ground state to the two upper energy levels correspond to the D2 and D1 lines, respectively. [0003...

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Problems solved by technology

[0006] (1) figure 2 In the scheme shown, the gain area is only formed at the focus position in the vapor chamber, and the activation volume is small, so the alkali metal atoms in the vapor chamber cannot be effectively utilized;

[0007] (2) The place between the steam chamber and the heating device is relatively loose, and effective thermal management cannot be performed;

[0008] (3) The shaping optical path is long, the components are many, and the system is complex, which is not conducive to miniaturization;

[0009] (4) The stable cavity design is adopted, and the mode matching is poor, which is not conducive to high beam quality output

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