A method for layout and wiring of anti-single event reinforced circuit unit

Abstract

The invention discloses a single-particle reinforcing-resistant circuit unit distributing and wiring method. The method comprises the following steps: carrying out schematic diagram module separation on a single-particle reinforcing-resistant circuit according to a separation requirement of single-particle sensitive nodes; carrying out layout design on each bottom-layer schematic diagram module; distributing under the premise that the separated distances between every two the sensitive nodes satisfy a single-particle reinforcing-resistant requirement; after unit distribution, carrying out layout wiring on the basis of the separated distribution layouts of the sensitive nodes and the connection relationship among the checked modules; and after carrying out layout design rule verification and layout-schematic diagram consistency verification, completing the distribution and wiring of the single-particle reinforcing-resistant circuit. According to the method disclosed in the invention, the difficulty of the single-particle reinforcing-resistant circuit in the layout realization process is solved, and the reliability and efficiency of the layout design of the single-particle reinforcing-resistant circuit are improved.

Description

technical field [0001] The invention relates to a layout and wiring method of a unit layout, in particular to a layout and wiring method of an anti-single particle reinforced circuit unit, which belongs to the technical field of anti-radiation design. Background technique [0002] The radiation produced by high-energy protons or high-energy neutrons hitting the atomic nucleus and the heavy nuclear particles in cosmic rays can cause changes in the state of the circuit, such as transients in combinational logic and bit flips in storage-type units. This effect is the effect of a single particle The result is often called single event effect. [0003] With the further shrinking of the feature size of the integrated circuit manufacturing process, the reduction of the device size is accompanied by the reduction of the node capacitance, and the critical charge required for the circuit to undergo a single event flip (that is, from 0 to 1 or 1 to 0) becomes extremely high. Low. For...

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Problems solved by technology

[0005] The technical problem of the present invention is: to overcome the deficiencies of the prior art, to provide a method for layout and wiring of anti-single particle hardening circuit unit, to solve the problem of difficult realization of circuit layout of complex anti-single particle hardening unit, and to improve the design efficiency of circuit layout and reliability

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