Phase change memory device and manufacturing method thereof

A manufacturing method and technology for a storage device, which can be applied to electrical components and other directions, and can solve the problems of increasing manufacturing processes and manufacturing costs.

Active Publication Date: 2018-11-02
北京时代全芯存储技术股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] As can be seen from the above, the known method of manufacturing phase change memory devices requires multiple masks, thus greatly increasing the manufacturing process and manufacturing cost

Method used

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  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof

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Embodiment Construction

[0045] Various embodiments of the present invention will be described in detail below and illustrated with accompanying drawings. In addition to the multiple detailed descriptions, the present invention can also be widely implemented in other embodiments, and any easy replacement, modification, and equivalent changes of any of the described embodiments are included in the scope of the present invention, and are subject to patent application. range prevails. In the description of the specification, many specific details are provided in order to enable readers to have a more complete understanding of the present invention; however, the present invention may still be practiced under the premise of omitting some or all of the specific details. Furthermore, well-known steps or elements have not been described in detail in order to avoid unnecessarily limiting the invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It should be n...

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Abstract

A manufacture method of a phase change storage device comprises that a first substrate which comprises at least one access circuit and at least one first plug is provided, the first conductive plug is electrically connected with the access circuit, and a top surface of the first conductive plug is exposed; part of the first conductive plug is removed to form at least one groove; a phase change material is deposited in the groove; a heater is formed on the phase change material; and a top electrode is formed on the heater. Via the manufacture method, multiple shades can be omitted, the manufacture process is simplified, and the manufacture cost is reduced.

Description

【Technical field】 [0001] The present invention relates to a storage device and its manufacturing method, in particular to a phase change storage device and its manufacturing method. 【Background technique】 [0002] The phase change memory device is a non-volatile random access memory. The phase change material in a phase change memory device can be switched between a crystalline state and an amorphous state by applying an appropriate electric current. Different states of phase change materials (eg, crystalline, semi-crystalline, or amorphous) represent different resistance values. Generally speaking, the amorphous state has a higher resistance value than the crystalline state, so data can be accessed by measuring the resistance value. [0003] A known method of manufacturing a phase change memory device such as Figure 1a to Figure 1d shown. First, fabricate the access circuit 11 on a substrate 10, then fabricate the bottom electrode 22 and the heater 23 on the substrate 1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 陶义方
Owner 北京时代全芯存储技术股份有限公司
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