Metal connecting wire preparation method
A metal wiring and metal layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of metal peeling, less obvious effect, wafer surface defects, etc., to prevent metal peeling defects Effect
Inactive Publication Date: 2016-06-01
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
Due to the physical characteristics of the high hardness of the top metal layer film itself, metal peeling defects are prone to occur on the edge of the wafer and the side walls of the physically deposited cavity during the process, resulting in the formation of defects on the wafer surface
In the prior art, methods such as washing are usually used to remove defects on the surface of the wafer, but the effect of this method is not obvious
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[0024] The metal connection preparation method of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the advantages of the present invention Effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0025] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as ...
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A metal connecting wire preparation method includes the steps of: providing a semiconductor substrate on which a lower metal layer, an intermediate metal layer and a top metal layer are deposited in sequence; depositing a buffer metal layer on the top metal layer; and selecting etching the buffer metal layer, the top metal layer, the intermediate metal layer and the lower metal layer, thereby forming a metal connecting wire structure. According to the metal connecting wire preparation method provided by the invention, the buffer metal layer is physically deposited after the top metal layer is deposited, the surface of a chip and side walls of a physically deposited cavity are all covered by a buffer metal layer with very good adhesiveness, and thus a metal peeling defect brought by the top metal layer and cavity side walls can be effectively prevented.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a metal connection preparation method. Background technique [0002] In the integrated circuit manufacturing process, it is necessary to use metal wires to connect the internal structure of the chip. At present, aluminum metal wires or aluminum-copper alloy metal wires are usually used. The metal wiring is prepared by deposition, photolithography, etching and other processes. After that, the upper and lower layer contact electrodes (Contact) and the connection of the via structure (Via) are formed on the metal wiring, and finally all the devices in the chip The structures are interconnected by design so that the chip can function properly. [0003] refer to figure 1 As shown, the metal wiring is usually a sandwich structure. That is, it includes the lower metal layer 2 , the middle metal layer 3 and the top metal layer 4 . The middle metal layer is usually an aluminum ...
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IPC IPC(8): H01L21/768H01L23/532
Inventor 夏禹
Owner SEMICON MFG INT (SHANGHAI) CORP