Unlock instant, AI-driven research and patent intelligence for your innovation.

Systems, methods and apparatus for pre-cleaning of substrate polishing after chemical mechanical planarization

A technology for pre-cleaning and substrates, applied in the direction of cleaning methods using tools, cleaning methods and utensils, chemical instruments and methods, etc.

Active Publication Date: 2019-05-28
APPLIED MATERIALS INC
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some particles and residues that remain after CMP may be difficult to remove using conventional cleaning methods such as brush box washing, megasonic bath immersion, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Systems, methods and apparatus for pre-cleaning of substrate polishing after chemical mechanical planarization
  • Systems, methods and apparatus for pre-cleaning of substrate polishing after chemical mechanical planarization
  • Systems, methods and apparatus for pre-cleaning of substrate polishing after chemical mechanical planarization

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0064] In some embodiments, the pressure applied to bellows 414 and / or polishing pad 208 during grinding may range from about 0.1 psi (pounds per square inch) to 4 psi. Example pressure accuracy may be about + / - 4% of full scale, while example pressure response times range from less than about 0.5 seconds to less than about 2 seconds. Other pressures, pressure accuracies and / or pressure response times may be used.

[0065] In some embodiments, polishing pad 208 may be formed from polyurethane, silicone, polyvinyl alcohol, or similar materials. Exemplary polishing pads range in diameter from about 20-80 millimeters and have a thickness of about 3.75 to about 6.25 millimeters. Example polishing pad spin rates range from 0 to 3000 rpm + / - 4% full scale. Other polishing pad materials, sizes and / or spin rates may be used.

[0066] In some embodiments, the swing arm 106 may allow a sweep range (on the substrate) of approximately 0 to 200 mm, + / - 4% full scale. Example sweep spee...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In some embodiments, an apparatus for cleaning a substrate is provided, the apparatus comprising: (1) a substrate chuck configured to support the substrate with an accessible front side of the substrate; (2) a polishing a pad assembly configured to support a polishing pad having a diameter smaller than the diameter of the substrate; and (3) a swing arm coupled to the polishing pad and configured to : positioning and rotating the polishing pad along the front side of the substrate; and controlling an amount of force exerted by the polishing pad against the front side of the substrate during cleaning. The substrate chuck, the polishing pad assembly, and the swing arm are configured to polish clean the substrate. Numerous additional aspects are disclosed.

Description

[0001] This application claims priority to U.S. Provisional Patent Application No. 61 / 895,527, filed October 25, 2013, and U.S. Provisional Patent Application No. 61 / 909,973, filed November 27, 2013, each of which is a provisional Both patent applications are hereby incorporated by reference in their entirety. technical field [0002] Embodiments of the present invention generally relate to electronic device fabrication including chemical mechanical planarization (chemical mechanical polishing, CMP), and in particular to methods and apparatus for post-CMP polishing pre-cleaning of substrates. Background technique [0003] After performing a chemical mechanical planarization (CMP) process on the substrate, the substrate is typically cleaned to remove unwanted debris and particles from the substrate. For example, slurry, ground substrate material, or other residues may adhere to the substrate, including the beveled edge of the substrate. [0004] After CMP, the substrate may ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/34B24B37/04B25J15/00
CPCH01L21/67046B08B1/36B24B37/04B24B37/34H01L21/02041H01L21/304H01L21/30625B08B1/143B08B1/32
Inventor C·P·萨卡塔H·陈J·K·阿特金森B·J·布朗J·唐Y·陈Y·丁
Owner APPLIED MATERIALS INC