Method for preparing mono-crystalline oxide resistive random access memory by utilizing ion injection and stripping technology

Abstract

The invention provides a method for preparing a mono-crystalline oxide resistive random access memory by utilizing an ion injection and stripping technology. The method comprises the following steps: (1) providing an oxide mono-crystal substrate; (2) carrying out ion injection in the oxide mono-crystal substrate from an injection surface and forming a lower electrode under the injection surface; or forming a lower electrode on the injection surface and then carrying out the ion injection in the oxide mono-crystal substrate from the injection surface; (3) providing a supporting substrate and bonding the structure obtained by the step (2) with the supporting substrate; (4) stripping one part of the oxide mono-crystal substrate along a defect layer to obtain an oxide mono-crystalline thin film and transferring the obtained oxide mono-crystalline thin film and lower electrode onto the supporting substrate; (5) forming an upper electrode on the surface of the oxide mono-crystalline thin film. With the adoption of the method provided by the invention, a total ion injection dosage needed for stripping and transferring the thin film is effectively reduced, so that a preparation period is shortened and the production cost is saved; meanwhile, the method can also be used for solving the problem that part of materials are injected through single ions and stripping cannot be realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to a method for preparing a single crystal oxide resistive variable memory by using ion implantation stripping technology. Background technique [0002] Non-volatile memory is an important part of the semiconductor field, and occupies a pivotal position in the semiconductor industry. With the advancement of technology in recent years and the continuous popularization of consumer electronic products such as smartphones, mobile storage, and tablet computers, the consumption of non-volatile memory has been greatly promoted. The global memory market has a strong demand for non-volatile memory Demand has increased dramatically. Not only that, the market's requirements for memory are also increasing, such as high capacity, high speed, low power consumption, low price and so on. These requirements have further promoted the continuous development of existing ...

AI Technical Summary

Problems solved by technology

However, there are many problems in these traditional thin film preparation methods, for example, it is generally necessary to grow oxide thin films at relatively high temperatures, and it is difficult to be compatible with existing CMOS processes

In addition, due to factors such as lattice mismatch, thermal mismatch, and interface defects, these traditional thin film preparation methods cannot grow high-quality single crystal oxide thin films on polycrystalline metal bottom electrodes.

The resistive switching properties of materials are closely related to the defects in the material. The problems of amorphous or polycrystalline thin films as resistive switching oxide dielectric layers include: On the one hand, there are many different defects in both amorphous and polycrystalline thin films , which is a great challenge for the study of the resistance switching mechanism of materials; on the other hand, the distribution of defects in amorphous and polycrystalline thin films is random, which is very important for reducing device size, stabilizing and optimizing device parameters, reliability Research, etc. are the bottlenecks that are difficult to break through

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