Cap layer for spacer-constrained epitaxially grown material on fins of a finfet device

Abstract

The invention relates to a cap layer for a spacer-constrained epitaxially grown material on fins of a finfet device; a method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin spacer has an upper surface. The at least one fin is recessed to thereby define a recessed fin with a recessed upper surface that it is at a level below the upper surface of the fin spacer. A first epitaxial material is formed on the recessed fin. A lateral extension of the first epitaxial material is constrained by the fin spacer. A cap layer is formed on the first epitaxial material. The fin spacer is removed. The cap layer protects the first epitaxial material during the removal of the fin spacer.

Description

technical field [0001] The present disclosure relates generally to the fabrication of semiconductor devices, and more particularly to a method of using spacers to limit epitaxial growth on fins of a FinFET device and providing a capping layer to protect the epitaxial material during removal of the spacers. Background technique [0002] In modern integrated circuits (such as microprocessors, memory devices, etc.), a very large number of circuit elements, especially transistors, are provided on a limited chip area. Transistors come in various shapes and forms, eg, planar transistors, FinFET transistors, nanowire devices, and more. Transistors are typically NMOS (NFET) or PMOS (PFET) devices, where the "N" and "P" designations are based on the type of dopant used to create the source / drain regions of the device. The so-called CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) technology or product refers to an integrated circuit product man...

AI Technical Summary

Problems solved by technology

Differences in size can cause differences in resistance

Furthermore, densely spaced fins 110 may be associated with individual devices (eg, N-channel devices and P-channel devices), and fused epitaxial material structures 140 may cause shorts between closely spaced fins 110 of individual devices, which can destroy their function

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