Unlock instant, AI-driven research and patent intelligence for your innovation.

Piezoelectric devices, piezoelectric sensors, and wearable devices

A piezoelectric sensor, piezoelectric device technology, applied in piezoelectric device or electrostrictive device parts, material selection for piezoelectric device or electrostrictive device, electric solid device, etc. It is difficult to mass-produce electrical devices, and PLA is difficult to apply to manufacture complex piezoelectric devices to achieve low-cost effects.

Active Publication Date: 2021-03-02
SAMSUNG DISPLAY CO LTD +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Piezoelectric devices fabricated using PLA are transparent, however, PLA is difficult to apply to fabricate complex piezoelectric devices such as multi-channel devices because PLA solidifies after being placed in a housing
In addition, piezoelectric devices fabricated using PLA are difficult to mass-produce

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoelectric devices, piezoelectric sensors, and wearable devices
  • Piezoelectric devices, piezoelectric sensors, and wearable devices
  • Piezoelectric devices, piezoelectric sensors, and wearable devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0067] The following description with reference to the accompanying drawings is provided to facilitate a comprehensive understanding of various embodiments of the present disclosure as defined by the claims and their equivalents. The following description includes various specific details to facilitate that understanding, but these are to be regarded as merely exemplary. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the various embodiments described herein can be made without departing from the scope and spirit of the disclosure. Also, descriptions of well-known functions and constructions may be omitted for clarity and conciseness.

[0068] The terms and words used in the following description and claims are only used to enable a clear and consistent understanding of the present disclosure. Accordingly, it should be apparent to those skilled in the art that the following descriptions of various embodiments of the pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Disclosed are a piezoelectric device, a piezoelectric sensor using the same, and a wearable device having the same. In one aspect, a piezoelectric device includes a piezoelectric layer formed of a piezoelectric material and a first layer formed over the piezoelectric layer and having a carbon nanostructure.

Description

[0001] This patent application claims priority from Korean Patent Application No. 10-2015-0040271 filed on Mar. 23, 2015, the contents of which are hereby incorporated by reference in their entirety. technical field [0002] The present disclosure generally relates to a piezoelectric device including carbon nanotubes and a piezoelectric sensor using the piezoelectric device. Background technique [0003] Typically, piezoelectric devices are fabricated such that the electrical resistance of the metal or semiconductor material changes when the metal or semiconductor material is deformed. However, when piezoelectric devices are fabricated using metallic materials, their piezo-resistance properties may not be suitable for certain applications. To compensate for the piezoresistive properties of a given metal, ongoing research involves the use of crystalline silicon to fabricate piezoelectric devices. However, piezoelectric devices fabricated using crystalline silicon are opaque ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/04H01L41/113H01L41/18
CPCH10N30/875H10N30/302H10N30/852G06F1/169G06F1/1694G06F1/163H10N39/00H10N30/883H10N30/87H10N30/853G06F3/017
Inventor 洪钟昊朴源祥林载翊秋惠容金大亨金在旻都敬植朴玟俊
Owner SAMSUNG DISPLAY CO LTD