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Slurry for polishing cobalt and substrate polishing method

A slurry and substrate technology, applied in chemical instruments and methods, polishing compositions containing abrasives, and other chemical processes, can solve the problems of insufficient realization of cobalt polishing selectivity for insulating films, difficult slurry, complex composition, etc. question

Active Publication Date: 2019-06-04
UBMATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, according to this method, the composition of the slurry may be complicated, and the components of the slurry have difficulty in controlling
And, since oxidizing agents are still used, it may be difficult to fully address corrosion limitations
Also, the slurry for polishing cobalt according to the prior art may not sufficiently realize the polishing selectivity of cobalt to the insulating film

Method used

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  • Slurry for polishing cobalt and substrate polishing method
  • Slurry for polishing cobalt and substrate polishing method
  • Slurry for polishing cobalt and substrate polishing method

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Embodiment Construction

[0030] Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration. Like reference numbers refer to like elements throughout.

[0031] The slurry according to an exemplary embodiment may be provided as a slurry for polishing cobalt. The slurry contains an abrasive for polishing and a polishing accelerator for adjusting polishing characteristics of cobalt and materials other than cobalt. And, the slurry may include a dispersing agent for dispersing the abrasive, and the polishing accelerator may include an organic acid including an...

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Abstract

The invention provides a slurry for polishing cobalt and a substrate polishing method. The slurry includes: an abrasive configured to perform polishing, the abrasive including zirconia particles; a dispersant configured to disperse the abrasive; and a polishing accelerator configured to accelerate polishing. The polishing accelerator contains an organic acid containing an amine group and a carboxyl group. According to the slurry according to the exemplary embodiment, the polishing rate of cobalt may be increased without using an oxidizing agent, and localized corrosion defects on the surface of cobalt may be suppressed.

Description

technical field [0001] The present invention relates to polishing slurries, and more particularly, to polishing slurries that can be used to planarize cobalt by chemical mechanical polishing in semiconductor manufacturing processes and uses of the polishing slurries substrate polishing method. Background technique [0002] As the size of semiconductor devices decreases and the number of metal lines increases, surface irregularities on each layer are transferred to the next layer. Therefore, the surface roughness of the lowermost layer becomes more and more important. The roughness can have a severe impact on the process, causing difficulties in performing photolithography processes, for example, in subsequent processes. Therefore, in order to improve the yield of a semiconductor device, a planarization process for removing roughness on a surface of irregularities occurring in several processes may be basically performed. The planarization process may include various proce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02B24B37/04
CPCB24B37/044C09G1/02C09K3/1436C09K3/1463H01L21/28079H01L21/3212
Inventor 朴珍亨
Owner UBMATERIALS