A High Precision Low Temperature Drift Bandgap Reference Voltage Source
A reference voltage source, low temperature drift technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of narrow temperature range, large influence of bandgap reference temperature drift processing technology, incompatibility, etc., to reduce The effect of circuit complexity
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[0027] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.
[0028] Such as figure 1 with figure 2 Shown, the circuit composition of the present invention:
[0029] (1) MOS transistors M1, M2, M3, M4, M5, M6, M7, M8, substrate PNP transistors Q1, Q2 and resistor R1 constitute a high-precision positive temperature coefficient current generating circuit, that is, a current proportional to the absolute temperature is generated I PTAT .
[0030] Let the MOS tubes M1 and M2, M3 and M4, M5 and M6, M7 and M8 have the same ratio of width W and length L respectively, that is:
[0031]
[0032] MOS transistors M5, M6, M7, and M8 form a negative feedback clamp, so that the voltages at node 3 and node 4 of the current mirror formed by MOS transistors M1, M2,...
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