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Semiconductor module, power conversion device, and method for manufacturing semiconductor module

A manufacturing method and semiconductor technology, which can be applied to semiconductor devices, output power conversion devices, semiconductor/solid-state device components, etc., and can solve problems such as semiconductor module configuration limitations

Active Publication Date: 2016-10-12
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, for example, when using bus bars to electrically connect semiconductor modules with different terminal arrangements, the arrangement of each semiconductor module is limited.

Method used

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  • Semiconductor module, power conversion device, and method for manufacturing semiconductor module
  • Semiconductor module, power conversion device, and method for manufacturing semiconductor module
  • Semiconductor module, power conversion device, and method for manufacturing semiconductor module

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Experimental program
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Embodiment approach 1

[0021] refer to Figure 1 ~ Figure 3 , and the configuration of the semiconductor module according to Embodiment 1 of the present invention will be described. The semiconductor module 10 according to Embodiment 1 mainly includes a first electrode terminal 1 , a second electrode terminal 2 , a third electrode terminal 3 , a fourth electrode terminal 4 , a fifth electrode terminal 5 , a sixth electrode terminal 6 , and a base portion 7 and the connecting portion 8 . Such as figure 2 As shown, the first electrode terminal 1 and the second electrode terminal 2 are arranged along the first direction A1. The third electrode terminal 3 , the fourth electrode terminal 4 , the fifth electrode terminal 5 , and the sixth electrode terminal 6 are arranged along a second direction A2 perpendicular to the first direction A1 . The first electrode terminal 1 is arranged at a position where the first direction A1 and the second direction A2 intersect.

[0022] Such as figure 2 As shown,...

Embodiment approach 2

[0035] Next, the structure of the semiconductor module according to Embodiment 2 of the present invention will be described. The semiconductor module according to Embodiment 2 differs from the semiconductor module according to Embodiment 1 mainly in that both the second electrode terminal 2 and the third electrode terminal 3 are DC anode terminals or DC cathode terminals. The semiconductor modules involved in Embodiment 1 are substantially the same.

[0036] refer to figure 1 and figure 2 Alternatively, the first electrode terminal 1 , the second electrode terminal 2 , and the third electrode terminal 3 may be configured to be connectable to the DC power supply 11 . Specifically, the first electrode terminal 1 can be connected to the anode (P side) of the DC power supply 11 , and the second electrode terminal 2 and the third electrode terminal 3 can be connected to the cathode (N side) of the DC power supply 11 . In other words, the first electrode terminal 1 is a DC anode...

Embodiment approach 3

[0040] Next, the structure of the semiconductor module according to Embodiment 3 of the present invention will be described. The semiconductor module according to Embodiment 3 differs from the semiconductor module according to Embodiment 1 mainly in that one of the second electrode terminal 2 and the third electrode terminal 3 is a non-connecting terminal, and the other structures are the same as those according to Embodiment 1. Semiconductor modules are roughly the same.

[0041] refer to figure 1 and figure 2 , it may also be configured such that one of the second electrode terminal 2 and the third electrode terminal 3 is a terminal not connected to the DC power supply 11, and the other of the second electrode terminal 2 and the third electrode terminal 3 is connected to the DC power supply. 11 Connected terminals. For example, the first electrode terminal 1 can be connected to the anode (P side) of the DC power supply 11 , the second electrode terminal 2 can be connecte...

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PUM

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Abstract

A semiconductor module has a first electrode terminal, a second electrode terminal, a third electrode terminal, a fourth electrode terminal, a fifth electrode terminal, and a sixth electrode terminal. The first electrode terminal and the second electrode terminal are arranged along a first direction. The third electrode terminal, the fourth electrode terminal, the fifth electrode terminal, and the sixth electrode terminal are arranged along a second direction perpendicular to the first direction. The first electrode terminal is arranged at a position where the first direction intersects with the second direction. The fourth electrode terminal, the fifth electrode terminal, and the sixth electrode terminal are AC output terminals or AC input terminals. The first electrode terminal is one of an anode terminal and a cathode terminal. At least one of the second electrode terminal and the third electrode terminal is the other of the anode terminal and the cathode terminal.

Description

technical field [0001] The present invention relates to a semiconductor module, a power conversion device, and a method of manufacturing the semiconductor module, and more particularly, to a semiconductor module having electrode terminals, a power conversion device, and a method of manufacturing the semiconductor module. Background technique [0002] Conventionally, a semiconductor module is known that converts DC power into three-phase (U-phase, V-phase, W-phase) AC power. The semiconductor module has an anode terminal and a cathode terminal connected to a DC power supply, and AC output terminals corresponding to the U phase, the V phase, and the W phase (for example, refer to Japanese Patent Laid-Open No. 2008-029052, Japanese Patent Laid-Open No. 2008-166421 Bulletin and Japanese Patent Application Laid-Open No. 2013-055739). According to the semiconductor module described in Japanese Patent Laid-Open No. 2008-029052, the anode terminal, the cathode terminal, and the AC ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/00H01L25/07
CPCH01L25/072H01L25/50H02M7/003H01L2224/48091H01L2224/48137H01L2224/48139H01L2224/49113H01L2924/1305H01L2924/13055H01L2924/30107H01L2224/40139H01L2224/84205H01L2224/40227H01L2224/37144H01L24/37H01L24/40H01L24/45H01L24/48H01L24/84H01L24/85H01L25/115H01L2224/37124H01L2224/45624H01L2224/45644H01L2224/48227H01L2224/85205H01L2924/10272H01L2924/1033H01L2924/1203H01L2924/19107H01L23/045H01L23/24H01L23/50H01L23/5386H01L2224/45124H01L2224/45144H01L25/18H01L2924/00014H01L2224/73221
Inventor 米山玲安藤正之荒木健宏木村义孝后藤亮
Owner MITSUBISHI ELECTRIC CORP