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Preparation method of silver island material

A silver island, silicon wafer technology, applied in metal material coating process, liquid chemical plating, coating and other directions, can solve the problems of uneven surface particle size, difficult particle size control, affecting material performance, etc., to achieve strong induction Ability, dimensional stability, the effect of avoiding falling off

Active Publication Date: 2016-11-23
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the silver base material prepared by the above method has uneven particle size on the surface, and the particle size is not easy to control, which affects the performance of the material.

Method used

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  • Preparation method of silver island material
  • Preparation method of silver island material
  • Preparation method of silver island material

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preparation example Construction

[0020] The invention provides a method for preparing a silver island material, comprising: 1) treating silicon wafers with piranha solution (piranha lotion) or concentrated alkali lotion (above 10wt%) and mercaptosilane sequentially to obtain a modified Silicon chip; 2) adding aldehyde compounds into the silver ammonia solution to react, and adding the modified silicon chip to the above reaction system, the reduction product nano-silver reacts with the mercaptosilane modified on the surface of the silicon chip and covalently connects to the surface to form the Describe the material of Yindao.

[0021] Wherein, the piranha solution is a washing solution in which concentrated sulfuric acid (95wt%-98wt%) and concentrated hydrogen peroxide solution (30wt%) are mixed in a volume ratio of 3:1.

[0022] The present invention does not limit the type of concentrated lye, for example, it may be concentrated NaOH or concentrated KOH solution.

[0023] After being treated with piranha so...

Embodiment 1

[0028] Preparation of silver ammonia solution

[0029] Accurately weigh 440 mg of silver nitrate with an analytical balance of 1 / 10,000, put it into a small beaker washed with piranha solution, add 50 ml of water to it, and accelerate the dissolution by ultrasonic to form a silver nitrate solution, add it to the small beaker magnetic sub, and on a magnetic stirrer, stir and mix at a medium speed; dropwise add 4 to 5 drops of 10wt% sodium hydroxide solution to a small beaker, stir and ultrasonically oscillate until the resulting precipitate is mixed evenly; Add 1mL of 10wt% ammonia water drop by drop to the small beaker. The dropping process requires constant stirring and ultrasonic vibration to prevent excessive ammonia water from being added until the precipitate is just completely dissolved and the silver ammonia solution is prepared. The above-prepared silver-ammonia solution was placed in an ice-water bath at 0°C and stirred until the overall temperature of the silver-ammo...

Embodiment 2

[0035] The steps of embodiment 2 and the raw materials used are the same as in embodiment 1, and its difference with embodiment 1 is only that in the preparation process of the nano-silver island film, the silver ammonia solution is mixed with 25% (v / v) pentadiene The aldehyde solution was reacted at 60°C for 4 minutes, and the size of the nanoparticles of the obtained silver island film was about 15nm. The SEM and SERS spectra of the silver island material were as follows Figure 3A , 3B shown.

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Abstract

The invention provides a preparation method of a silver island material. The preparation method comprises the following steps: firstly, a silicon wafer is sequentially treated by a piranha solution or a concentrated alkali liquor and sulfydryl silane, so that a modified silicon wafer is obtained; and secondly, an aldehyde compound is added to a silver-ammonia solution to react, the modified silicon wafer is added to the reaction system, a reaction product, silver, deposits on the surface of the silicon wafer, and the silver island material is obtained. According to the preparation method of the silver island material, the surface of the silicon wafer is modified before a silver island film is formed, so that the silver island film can be firmly fixed to the surface of the silicon wafer, and the silver island film is prevented from falling off in the follow-up application and treatment processes. By the adoption of the preparation method, the thickness of the silver island film can be controlled to be smaller than 100 nm, and the prepared silver island film is stable in size and has a relatively high capability of sensing SERS signals.

Description

technical field [0001] The invention relates to a preparation method of a silver island material, in particular to a preparation method of forming a silver island film (silver island film) on a silicon substrate. Background technique [0002] At present, the methods for preparing silver substrate materials mainly include chemical synthesis, ion sputtering, and photolithography. However, the surface particle size of the silver base material prepared by the above method is not uniform, and the particle size is not easy to control, thus affecting the performance of the material. Contents of the invention [0003] In order to solve the above technical problems, the present invention provides a method for preparing a silver island material, comprising: 1) sequentially treating silicon wafers with piranha solution or concentrated lye and mercaptosilane to obtain modified silicon wafers; 2 ) adding the aldehyde compound into the silver-ammonia solution for reaction, and adding t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/42C23C18/18
Inventor 李敏马磊王娇娇赵宇亮
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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