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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as difficult formation and maintenance of its predetermined appearance and state

Active Publication Date: 2019-06-14
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the height of the stack increases, certain issues with these structures can arise
For example, such structures can be more difficult to form and maintain their intended shape and state

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0062] A method of fabricating a semiconductor structure, and a semiconductor structure fabricated therefrom, will now be described in this specification, with particular focus on structures formed on the sidewalls of the stack. This method includes the following steps. First, a plurality of stacks are formed on a substrate. A plurality of memory layers are formed on sidewalls of these stacked layers, respectively. A plurality of channel layers are respectively formed on the memory layer, and a surface of each of the channel layers is exposed. Afterwards, a plurality of connection parts are formed, and the connection parts respectively connect the respective surfaces of the channel layers to the substrate.

[0063] Figure 1A ~ Figure 1H A method for fabricating a semiconductor structure according to an embodiment is shown. Please refer to Figure 1A , providing a substrate 102 . Substrate 102 may be formed of silicon and doped p-type. A stack 1040 is formed on the subst...

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PUM

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Abstract

The invention discloses a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a substrate, multiple lamination layers, multiple storage layers, multiple channel layers and multiple connecting parts, wherein the lamination layers are arranged on the substrate; each lamination layer comprises a conductive layer and an insulating layer which are laminated alternately; the storage layers are arranged on the side walls of the lamination layers respectively; the channel layers are arranged on the storage layers respectively; each channel layer comprises an exposed surface; and the connecting parts are used for connecting the respective surfaces of the channel layers to the substrate.

Description

technical field [0001] The invention relates to a semiconductor structure and a manufacturing method thereof. In particular, the present invention relates to a semiconductor structure in which a channel layer is connected to a substrate, and a method of manufacturing the same. Background technique [0002] In order to reduce volume and weight, increase power density, improve portability and other reasons, people in the industry are striving to increase the density of semiconductor devices. One way to do this is to use three-dimensional (3D) structures instead of traditional two-dimensional (2D) structures. A three-dimensional semiconductor structure may include multiple stacks formed on a substrate. The stacks are separated from each other by high aspect ratio trenches or holes. Certain structures may be formed in the trenches or holes along the sidewalls of the stack and / or at the bottom of the trenches or holes. However, as the height of the stack increases, certain pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/485H01L23/528H01L21/60
Inventor 赖二琨施彦豪
Owner MACRONIX INT CO LTD