A jfet tube
An injection area, N-type technology, applied in the field of JFET tubes, can solve problems such as limited withstand voltage, inability to make high-voltage resistant junction field effect transistors, and low device current, and achieve the effect of increasing the withstand voltage
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no. 1 example
[0024] Such as figure 1 As shown, the JFET tube of this embodiment includes: a P-type substrate 100, and the P-type substrate 100 is used as a back gate; an N-type implant region 200 is formed in the upper surface layer of the P-type substrate 100; The P-type implanted region 300 formed in the upper surface layer of the N-type implanted region 200, the P-type implanted region 300 is used as a positive gate; the P-type heavily doped region 310 formed in the upper surface layer of the P-type implanted region 300; An N-type heavily doped drain region 210 and a source region 220 are formed at both ends of the upper surface layer of the N-type implant region 200, and the positive gate is close to the source region 220; the drain region 210 and the P-type implant region The first field oxide layer 410 formed on the N-type implant region 200 between 300; the second field oxide layer 420 formed on the N-type implant region 200 between the source region 220 and the P-type implant regio...
no. 2 example
[0027] Such as figure 2 As shown, the difference between this embodiment and the first embodiment is that the P-type doped region 500 is in an "L" shape, and the side close to the P-type implanted region 300 is in contact with the first field oxide layer 410, And it is electrically connected to the positive gate, and both sides of the P-type doped region 500 form a PN junction depletion with the N-type implanted region, so that the P-type doped region 500 with the same volume can achieve better compression resistance, or achieve the same The volume of the P-type doped region 500 required for the anti-pressure effect is smaller, which saves costs;
[0028] In this embodiment, the N-type implant region 200 between the P-type doped region 500 and the first field oxide layer 410 is electrically connected to the drain near the side of the drain region 210, so that the P-type doped region 500 and the first field oxide layer 410 The PN junction formed between the N-type implanted r...
no. 3 example
[0031] Such as image 3 As shown, in this embodiment, compared with the first embodiment, the N-type implanted region 200 is divided into a first N-type implanted region 201 and a second N-type implanted region 202, and the second N-type implanted region 202 is formed on the P-type doped In the upper surface layer of the first N-type implantation region 201 between the impurity region 500 and the P-type implantation region 300, and the multi-substance concentration of the second N-type implantation region 202 is lower than that of the first N-type implantation region 201, increasing the N-type implantation Region 200 surface voltage resistance capability, the depth of the second N-type implant region 202 is greater than the P-type doped region 500 and smaller than the P-type implant region 300, which enhances the depletion withstand voltage capability of the P-type doped region 500, while reducing the impact on the channel The influence of the carrier concentration in the chan...
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