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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of electrical components, etc., can solve problems such as limiting the size of the array and increasing power consumption

Inactive Publication Date: 2017-03-01
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, multiple leakage paths may exist in a cross-point array of a three-dimensional stacked memory device, and the leakage paths may limit the array size of the memory device and increase power consumption.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0031] Embodiments of the present invention are described in detail below with reference to the accompanying drawings. The same reference numerals in the drawings are used to designate the same or similar parts. It should be noted that the drawings have been simplified to clearly illustrate the content of the embodiments, and the size ratios in the drawings are not drawn in the same proportion as actual products, so they are not used to limit the protection scope of the present invention.

[0032] Figure 1A A top view of a memory device 100 according to an embodiment of the present invention is shown. Figure 1B The memory device 100 of the embodiment of the present invention is along Figure 1A The cross-sectional view shown by the A-A' cross-hatching line in . In the embodiment of the present invention, the memory device 100 may include a substrate 11 , a plurality of alternately stacked semiconductor layers 13 and oxide layers 15 , at least one through hole 61 and an elec...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. A memory apparatus comprises a substrate, a plurality of interacting laminated semiconductor layers and oxide layers, at least a through hole and an electrode layer, wherein the interacting laminated semiconductor layers and oxide layers are arranged on the substrate, the through hole passes through the interacting laminated semiconductor layers and oxide layers, and the electrode layer is arranged in the through hole. Each semiconductor layer comprises a first area and a second area, wherein the first area has a first conductive type, the second area has a second conductive type, and the second conductive type is opposite to the first conductive type.

Description

technical field [0001] The present invention relates to a memory device and a manufacturing method thereof, and more particularly to a resistive random-access memory (RRAM) device with a PN or PIN diode and a manufacturing method thereof. Background technique [0002] Memory devices are used in many products, such as MP3 players, digital cameras, computer files and other storage components. With the advancement of memory manufacturing technology, the demand for memory devices also tends to be smaller in size and larger in storage capacity. In response to this demand, it is necessary to manufacture memory devices with high device density. [0003] As a candidate for next-generation nonvolatile memory (nonvolatile memory) applications, resistive random access memory has attracted a lot of attention due to its simple metal-insulator-metal (metal-insulator-metal) structure, excellent The scalability (scalability), fast switching speed (switching speed), low-voltage operation a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 赖二琨蒋光浩
Owner MACRONIX INT CO LTD