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Method of adding auxiliary graph

A technology of auxiliary graphics and graphics, which is applied to the photoplate-making process of the patterned surface, the originals used for photomechanical processing, instruments, etc., can solve the problems of poor image contrast, light intensity of through holes, etc., and achieve the goal of improving quality and process window Effect

Active Publication Date: 2017-03-22
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

[0002] In the dark field process, the light intensity obtained by the through hole is weak, and the image contrast is poor

Method used

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  • Method of adding auxiliary graph

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Embodiment Construction

[0027] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0028] The present invention formulates an additional set of AF rules based on the benchmark AF rule, that is, the auxiliary graphic reference rule, hereinafter referred to as the Base AF rule, that is, the auxiliary graphic extra rule, hereinafter referred to as the Extra AF rule, and the Extra AF rule only includes the Base AF rule. Only one AF rule information can be added.

[0029] The following is attached Figure 3-6 The present invention will be described in further detail with specific examples. It should be noted that the drawings are all in a very simpl...

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Abstract

The invention provides a method of adding an auxiliary graph. The method comprises the following steps: providing an OPC target graph, selecting a rule of adding only one auxiliary graph part according to an auxiliary graph benchmark rule and building an additional rule of the auxiliary graph; amplifying the whole target graph, expanding all edges of the target graph outwards at a distance A; on the basis of the additional rule of the auxiliary graph, subtracting 2A from a distance value between corresponding target graphs in the additional rule of the auxiliary graph; on the basis of the distance A, correspondingly adjusting other parameters affected by amplification of the whole target graph in the additional rule of the auxiliary graph; operating the additional rule of the auxiliary graph and generating a first auxiliary graph; executing the auxiliary graph benchmark rule on the target graph by employing the first auxiliary graph as a newly added reference graph, and generating a second auxiliary graph; and superposing the first auxiliary graph, the second auxiliary graph and other existing auxiliary graphs to form the final auxiliary graph.

Description

technical field [0001] The invention relates to the technical field of semi-integrated circuit manufacturing, in particular to a method for adding auxiliary graphics. Background technique [0002] In the dark field process, the light intensity obtained by the through hole is weak, and the image contrast is poor. As the line width decreases, the mask error factor (Mask Error Effect, MEF) at the via hole level increases significantly, which brings about a significant change in the line width on the silicon wafer due to small fluctuations in the size of the mask pattern. , semiconductor process conditions will have various fluctuations, typically such as fluctuations in focal length and exposure energy in the lithography process will lead to fluctuations in the lithography line width. Therefore, in order to ensure the yield, it is necessary to improve the resolution capability and the process window of the via pattern. [0003] The current commonly used method is to insert AF...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
CPCG03F1/36G03F7/70441
Inventor 胡红梅
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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