Photoelectric assembly used for light sensor and manufacturing method thereof

Abstract

The invention provides a photoelectric assembly used for a light sensor and a manufacturing method thereof. The photoelectric assembly comprises a first metal layer (11), a semiconductor layer (13), obstruction areas (131) and a transparent conducting layer (15). The obstruction areas (131) are formed on the side wall of the semiconductor layer (13) through an oxidation reaction. The photoelectric assembly (10) can prevent leakage current of the side wall of the semiconductor layer (13) through the obstruction areas (131) when being applied to the light sensor.

Description

technical field [0001] The present invention relates to the field of optoelectronic components used in light sensors, and more particularly, to a optoelectronic component with barrier regions. Background technique [0002] In optical application systems, light of various wavelength bands contained in external light sources is often used for various different types of applications, such as visible light sensors sensing light wavelengths from 380nm to 760nm, or infrared sensors in the infrared wavelength range , the ultraviolet sensor in the ultraviolet range, the distance sensor that emits a light wavelength and receives the light information reflected by the light wavelength to achieve the purpose of measuring the distance, and the sensor that transmits the optical fiber optical signal, etc., are all light sensors that apply external light sources Measuring device to convert optical signal into electrical signal. Generally, in the field of photosensors, it can be divided in...

AI Technical Summary

Problems solved by technology

However, due to the electrical characteristics of the diode and the electrical connection structure of the light sensor, it is easy to have a leakage current from the diode to the transistor, resulting in a decrease in output quality. Therefore, in the commonly used light sensor structure, there are methods to improve the leakage current of the diode

The commonly used method to improve the diode leakage current is to deposit a silicon oxide (SiOx) insulating film layer on the diode by chemical vapor deposition. However, this method will add an additional chemical vapor deposition to the overall process of the photosensor, resulting Process increase

[0003] Based on the above, in the field of sensor technology in the past, a chemical vapor deposition process was added to the overall process to deposit a silicon oxide (SiOx) film to prevent leakage current. Silicon film, this step may further damage the already deposited diode when the photoresist is finally etched

Therefore, although the commonly used technology improves the problem of leakage current, it increases the manufacturing process of the photosensor, and the increased manufacturing process is more likely to damage the existing diode structure, thereby affecting the yield rate.

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