Pattern forming method and method of manufacturing article
一种图案、制品的技术，应用在图纹面的照相制版工艺、半导体/固态器件制造、仪器等方向，能够解决难多个基板使用公共指标等问题
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no. 1 example
[0031] A pattern forming method according to a first embodiment of the present invention will be described. In manufacturing a semiconductor device or the like, generally, a step of forming a pattern layer on a substrate using a photolithography apparatus is repeated so that a plurality of pattern layers are overlapped on the substrate. Each pattern layer may be formed by performing a process such as etching on a substrate on which a resist pattern is formed by a photolithography apparatus. Recently, when forming a plurality of pattern layers on a substrate, each pattern layer is sometimes formed by using a plurality of photolithography apparatuses and different types of alignment methods. For example, in an exposure apparatus (second lithography apparatus) that transfers a pattern of a master plate (mask) to a substrate via a projection optical system, a global alignment method is used as a main alignment method between the mask and the substrate. On the other hand, in an im...
no. 2 example
[0063] In the first embodiment, an example in which imprint processing is performed by using the mold 8 on which a plurality of patterns 12 have been formed in the imprint apparatus 1 (example in which multi-region imprint processing is performed) has been described. In the mold 8 on which a plurality of patterns 12 have been formed as described above, the shape and orientation of each pattern 12 on the mold sometimes differ due to manufacturing errors and the like. As a result, shapes and orientations are different in a plurality of partial regions 13 a in one shot region mp. In this case, if alignment information is shared among a plurality of partial regions 13a in one shot region mp, it may be difficult for the exposure device 30 to accurately transfer the pattern 41 of the mask 40b to each partial region 13a. Therefore, in the second embodiment, the alignment information of the partial region 13 a for each position in each shot region mp formed on the substrate by the fir...
no. 3 example
[0067] In the first embodiment, an example has been described in which a plurality of marks are formed on the substrate 10 to correspond to each of the plurality of patterns 12 formed on the mold 8 in step S1 by using the exposure device 30 . However, in step S2, when performing alignment between the mold 8 and the substrate 10, only some of the plurality of marks formed on the substrate are used. Therefore, in order to increase throughput, in step S1 , only the number of marks required to perform alignment between the mold 8 and the substrate 10 in step S2 may be formed on the substrate. Therefore, in the third embodiment, an example in which a number of marks required to perform alignment between the mold 8 and the substrate 10 in step S2 is formed on the substrate will be described.
[0068] Figure 9A is a diagram showing step S1 of forming a plurality of marks on a substrate by using the exposure device 30 . For example, if Figure 9A As shown, the mask 40c used by the...
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