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Reference circuit with direct proportion of abrupt change temperature to absolute temperature

A reference circuit, absolute temperature technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve problems such as abnormal operation

Active Publication Date: 2017-06-06
CHONGQING GIGACHIP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The PTAT of this design is very limited. Nowadays, high-precision analog circuits are particularly sensitive to bias current, and the magnitude of the current directly affects performance. After the PTAT voltage is converted into current, the current is large at high temperature, and the current is too small at low temperature, resulting in low temperature. not working properly

Method used

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  • Reference circuit with direct proportion of abrupt change temperature to absolute temperature
  • Reference circuit with direct proportion of abrupt change temperature to absolute temperature
  • Reference circuit with direct proportion of abrupt change temperature to absolute temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0026] The specific circuit diagram of the present invention is as follows Figure 4 A circuit diagram of Embodiment 1 of a reference circuit whose steep change is proportional to absolute temperature is shown in the circuit diagram. It contains: the first resistor R 1 , the second resistor R 2 , the third resistor R 3 , the fourth resistor R 4 , the fifth resistor R 5 , the sixth resistor R 6 , the seventh resistor R 7 , the first PNP transistor Q 1 , the second PNP transistor Q 2 , the third PNP transistor Q 3 , the first inverter I 1 , the second inverter I 2 , NMOS transistor N 1 , Amplifier A 1 , where the first resistor R 1 One end is connected to the power supply, and the other end is connected to the second resistor R 2 one end and the first PNP transistor Q 1 the emitter, the second resistor R 2 The other end of the first PNP transistor Q 1 The base, the first PNP transistor Q 1 The collector, the third resistor R 3 one end and the first inverter I ...

Embodiment 2

[0034] The specific circuit diagram of the present invention is as follows Figure 5 A circuit diagram of Embodiment 2 of a reference circuit whose steep change is proportional to absolute temperature is shown in the circuit diagram. It contains: the first resistor R 1 , the second resistor R 2 , the third resistor R 3 , the fourth resistor R 4 , the fifth resistor R 5 , the sixth resistor R 6 , the first PNP transistor Q 1 , the second PNP transistor Q 2 , the third PNP transistor Q 3 , the first inverter I 1 , the second inverter I 2 , the third inverter I 3 , NMOS transistor N 1 , Amplifier A 1 , where the first resistor R 1 One end is connected to the power supply, and the other end is connected to the second resistor R 2 one end and the first PNP transistor Q 1 the emitter, the second resistor R 2 The other end of the first PNP transistor Q 1 The base, the first PNP transistor Q 1 The collector, the third resistor R 3 one end and the first inverter I 1...

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PUM

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Abstract

The invention discloses a reference circuit with direct proportion of the abrupt change temperature to the absolute temperature. The reference circuit comprises a triode Q2, a triode Q3, a resistor R4, a resistor R5, a resistor R6 and an amplifier, wherein the resistor R4 and the resistor R5 are respectively connected with the amplifier A1, the resistor R5 is connected with the amplifier A1, the resistor R4 is connected with the triode Q2, a base electrode and a collector electrode of the triode Q2 are grounded, the resistor R6 is connected with the triode Q3 and the amplifier A1, a base electrode and a collector electrode of the triode Q3 are grounded, the resistor R6 is connected with the amplifier A1, and the output of the reference circuit is changed by increasing the specific value of the resistor R5 and the resistor 4. The characteristic that the VBE voltage of the triode decreases with the increase of the temperature is utilized, a transistor at the normal temperature or low temperature is turned on through the voltage, the output voltage of the reference circuit is designed to be a zero-temperature coefficient voltage, the voltage is utilized to turn off the transistor at the high temperature, the positive temperature characteristic exceeds the negative temperature characteristic, and then the output of the reference circuit is abruptly changed to a positive temperature curve.

Description

technical field [0001] The invention relates to the field of analog-to-digital / digital-to-analog converters and its application, in particular to a reference circuit with abruptly changing positive temperature coefficient, which provides a reference circuit that only changes to a reference circuit proportional to absolute temperature at high temperature. Background technique [0002] Conventional reference circuits are designed with zero temperature coefficient voltage outputs, figure 1 Shown is a conventional zero temperature reference voltage generation circuit with an output voltage of: [0003] [0004] where V BE2 for the PNP transistor Q 2 BE pole voltage. V T =kT / q, k is Boltzmann's constant, T is absolute temperature, q is the charge of electrons, and n is Q 2 The total emitter area ratio on Q 3 the total emitter area. The reference voltage with zero temperature coefficient is designed as (1+R 5 / R 4 )lnn≈1.72. and V with negative temperature characteris...

Claims

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Application Information

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IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 徐鸣远李梁秦煜森聂辉王育新付东兵陈光炳黄兴发沈晓峰陈玺
Owner CHONGQING GIGACHIP TECH CO LTD