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A quantum dot film with high water and oxygen barrier capacity and its preparation method

A technology of quantum dot film and water-oxygen barrier layer, applied in instruments, diffusing elements, optical elements, etc., can solve the problems of inability to make films, thick quantum dot film thickness, complex structure, etc., and achieve low production cost and service life. Long, structurally stable effect

Active Publication Date: 2021-06-04
XIAMEN BOHR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages of this method are: (1) Quantum dots need to be mixed with molten polyvinylidene chloride, and the melting temperature of polyvinylidene chloride is very high, generally 198°C to 205°C. Quantum dots are easy to react with water and oxygen; (2) the price of polyvinylidene chloride is expensive
In addition to polyvinylidene chloride, other resins with water and oxygen barrier properties such as ethylene-vinyl alcohol copolymers, polyamides, polyimides, etc. are also difficult to dissolve in organic solvents, and cannot be formed by coating resin solutions. , but can only be produced by melt extrusion, quantum dots are easy to react with water and oxygen at high temperature
[0005] Patent CN 106257697, published on December 28, 2016, discloses a quantum dot film, which uses a solidified layer to seal the water-oxygen barrier layer to enhance the water-oxygen barrier of the quantum dot film, which has a complex structure and cumbersome preparation process , and the thickness of the prepared quantum dot film is relatively thick, etc.

Method used

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  • A quantum dot film with high water and oxygen barrier capacity and its preparation method
  • A quantum dot film with high water and oxygen barrier capacity and its preparation method
  • A quantum dot film with high water and oxygen barrier capacity and its preparation method

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preparation example Construction

[0034] A method for preparing a quantum dot film with high water and oxygen barrier capacity as described above, comprising the following preparation steps:

[0035] S010, uniformly mixing the quantum dots, diffusion particles, linear resin and film-forming aid at room temperature to form a liquid mixture;

[0036] S020. Apply the liquid mixture in step S010 on the surface of the release film, and then heat for 5-30 minutes to volatilize the solvent or react small molecules to form macromolecules, and solidify the liquid mixture into a quantum dot film, and remove the release film After that, the quantum dot layer is obtained;

[0037] S030, heating the quantum dot layer prepared in step S020 to 110°C-150°C and stretching the quantum dot layer uniaxially;

[0038] S040. After laminating a layer of water and oxygen barrier layers on the upper and lower surfaces of the uniaxially stretched quantum dot layer, a quantum dot film with high water and oxygen barrier capacity is obta...

Embodiment 1

[0046] At room temperature, 0.6 parts of green quantum dots, 0.06 parts of red quantum dots, 27 parts of diffusion particles, 10 parts of linear polyisobutylene, 0.03 parts of polyethylene glycol nucleating agent, 0.3 parts of leveling agent, 20 parts of cyclohexane are mixed evenly to form a liquid mixture;

[0047] Coat the prepared liquid mixture on the surface of the release film, heat at 80°C to 90°C for 5 minutes to volatilize the cyclohexane, solidify the liquid mixture into a quantum dot film, and then remove the release film to obtain the quantum dot layer ;

[0048] The obtained quantum dot layer is uniaxially stretched at 110°C, and a water-oxygen barrier layer is attached to the upper and lower surfaces of the stretched quantum dot layer to obtain quantum dots with high water-oxygen barrier capacity. membrane.

Embodiment 2

[0050] At room temperature, 1.1 parts of green quantum dots, 0.1 parts of red quantum dots, 10 parts of diffusion particles, 20 parts of linear syndiotactic polystyrene, 0.05 parts of organophosphate nucleating agent, 40 parts of Methyl isobutyl ketone and 0.1 part of leveling agent are mixed evenly to form a liquid mixture;

[0051] Coat the prepared liquid mixture on the surface of the release film, heat at 90°C to 100°C for 10 minutes to volatilize the methyl isobutyl ketone, solidify the liquid mixture into a quantum dot film, and then remove the release film, that is Get the quantum dot layer;

[0052] The obtained quantum dot layer is uniaxially stretched at 120°C, and a water-oxygen barrier layer is attached to the upper and lower surfaces of the stretched quantum dot layer to obtain quantum dots with high water-oxygen barrier capacity. membrane.

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Abstract

The invention provides a quantum dot film with high water and oxygen barrier capacity and a preparation method thereof, wherein the quantum dot film with high water and oxygen barrier capacity includes a quantum dot layer and a water and oxygen barrier layer, and the water and oxygen barrier layer is arranged on the quantum dot film The upper and lower surfaces of the dot layer, the quantum dot layer includes: quantum dots, diffusion particles, linear resin, nucleating agent and film-forming auxiliary agent. The quantum dot film with high water and oxygen barrier properties provided by the present invention can effectively prevent water vapor and oxygen from entering the quantum dot film from the end face of the quantum dot film to cause damage to the quantum dots inside the quantum dot film, and has high water and oxygen barrier ability, It has the advantages of long service life, stable structure, and low production cost, and is suitable for mass production.

Description

technical field [0001] The invention relates to the field of quantum dot films, in particular to a quantum dot film with high water and oxygen barrier capacity and a preparation method thereof. Background technique [0002] The quantum dot film is applied in the liquid crystal backlight module, which can increase the color gamut of the liquid crystal display device to above 100% NTSC. Quantum dots are sensitive to water vapor and oxygen, so it is necessary to isolate the quantum dots from the external environment. [0003] The general method is to set a layer of water and oxygen barrier layers on the upper and lower surfaces of the quantum dot film, but there is no barrier layer on the end face of the quantum dot film, causing water vapor and oxygen to enter the quantum dot film from the end face of the quantum dot film. The dots cause damage, so that the fluorescence intensity of the quantum dots at the edge of the film is attenuated, and the color of the edge of the film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L23/22C08L71/02C08L25/06C08L75/06C08L93/04C08L75/04C08L75/08C08L75/02C08K5/521C08K5/20C08K5/10C08K5/098G02B5/02
CPCC08K5/098C08K5/10C08K5/20C08K5/521C08L23/22C08L75/06C08L2203/16C08L2205/24G02B5/0242C08L71/02C08L25/06C08L93/04C08L75/04C08L75/08C08L75/02
Inventor 陈凯武
Owner XIAMEN BOHR TECH CO LTD