Solid-state imaging device, camera module and electronic apparatus

Abstract

A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source / drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source / drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

Description

[0001] This application is a divisional application for an invention patent application with an application date of August 22, 2012, an application number of 201210300957.9, and an invention name of "solid-state imaging device and electronic device". technical field [0002] The present disclosure relates to solid-state imaging devices and electronic equipment including the solid-state imaging devices. Background technique [0003] Heretofore, as solid-state imaging devices, complementary metal-oxide-semiconductor (CMOS) image sensors, which are read and stored in photodiodes (photoelectric conversion elements) through metal-oxide-semiconductor (MOS) transistors, have been used in various applications in recent years signal charge. Generally, a CMOS image sensor has a substrate on which a photodiode that photoelectrically converts incident light is formed, and a wiring layer formed on the substrate. Currently, as a CMOS image sensor, a front-illuminated CMOS image sensor th...

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Problems solved by technology

[0005] On the other hand, since the back-illuminated CMOS image sensor is irradiated with light from the reverse side of the substrate, the back-illuminated CMOS image sensor is not easily subject to reflection, absorption, refraction, etc. of incident light in pixel units such as wires, transistors, etc. influences

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