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Solid-state imaging device and electronic apparatus

A solid-state imaging device, electrical connection technology, applied in the direction of electric solid-state devices, semiconductor devices, televisions, etc., to achieve the effect of suppressing the difference in characteristics

Active Publication Date: 2013-03-06
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] On the other hand, since the back-illuminated CMOS image sensor is irradiated with light from the reverse side of the substrate, the back-illuminated CMOS image sensor is not easily subject to reflection, absorption, refraction, etc. of incident light in pixel units such as wires, transistors, etc. influences

Method used

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  • Solid-state imaging device and electronic apparatus
  • Solid-state imaging device and electronic apparatus
  • Solid-state imaging device and electronic apparatus

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no. 1 example

[0051] 1. First embodiment: 4-transistor type solid-state imaging device (8-pixel sharing)

[0052] 2. Various improvements of the first embodiment

no. 2 example

[0053] 3. Second embodiment: 4-transistor type solid-state imaging device (4-pixel sharing)

no. 3 example

[0054] 4. Third Embodiment: 4-transistor type solid-state imaging device (2-pixel sharing)

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Abstract

A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source / drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source / drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

Description

technical field [0001] The present disclosure relates to a solid-state imaging device and electronic equipment including the solid-state imaging device. Background technique [0002] So far, as a solid-state imaging device, a complementary metal-oxide-semiconductor (CMOS) image sensor, which reads the photodiode (photoelectric conversion element) stored in a photodiode (photoelectric conversion element) through a metal-oxide-semiconductor (MOS) transistor, has been used in various applications in recent years. signal charge. In general, a CMOS image sensor has a substrate on which a photodiode that photoelectrically converts incident light is formed, and a wiring layer formed on the substrate. Currently, as a CMOS image sensor, a front-illuminated CMOS image sensor irradiated with light from a surface on the wiring layer side of a substrate has been widely used. Also, in recent years, in order to improve the sensitivity of photodiodes, backside-illuminated CMOS image senso...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/374
CPCH04N5/3745H04N25/77H01L27/14641H01L27/14609H01L27/14603H01L27/14605H01L27/14612H01L27/14636H01L27/1464H01L27/14643H01L27/14625
Inventor 加藤菜菜子若野寿史山本敦彦
Owner SONY CORP